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RF-MEMS: Materials and technology, integration and packaging

Published online by Cambridge University Press:  01 February 2011

Harrie A. C. Tilmans
Harrie A. C. Tilmans*
Affiliation:
IMEC, Division MCP, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

MEMS technology is rapidly emerging as an enabling technology to yield a new generation of highperformance RF-MEMS passives, like switches, tunable capacitors, high-Q resonators and tunable filters. This paper presents the progress in RF-MEMS device and package development with focus on relevant technology and material issues. The importance of wafer-level or 0-level packaging of the RF-MEMS devices is elucidated. Examples of 1-level packaging, e.g., chip-on-board or plastic molded 1-level package, are briefly described. The paper concludes in stipulating how integration of RF-MEMS passives with other passives (as inductors, LC filters, SAW devices) and active circuitry (RFICs) can lead to so-called “RF-MEMS system-in-a-package (RF-MEMS-SiP)” modules. The evolution of the RF-MEMS-SiP technology is illustrated using IMEC's microwave multi-layer thin film MCM-D technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 783: Symposium B – Materials, Intergration, and Packaging Issues for High-Frequency Devices , 2003 , B6.6
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Collander, P. “Packaging technologies cellular phones”, Advancing Microelectronics May/June 1999 pp. 13–16.Google Scholar
2. Mannion, P., “Cellular/PCS systems take the globe by storm”, Electronic Design Sept. 1999, pp. 63–68.Google Scholar
3. Pulsford, N., “Passive integration technology: Targeting small accurate RF parts”, RF Design, November 2002, pp. 40–48.Google Scholar
4. Burghartz, J. N., “Status and trends of silicon RF technology”, Microelectronics Reliability, 41, 2001, pp. 13–19.Google Scholar
5. van de Walle, G., “Integration of passive components: An introduction”, Philips J. Res., 51, 1998, pp. 353–361.Google Scholar
6. Brown, W. D., “Introduction and overview of microelectronic packaging”, in Adv. Electronic Pack. with emphasis on Multichip Modules edited by Brown, W D (New York: IEEE Press), 1999.Google Scholar
7. Carchon, G., Nauwelaers, B., Pieters, P., Vaesen, K., De Raedt, W. and Beyne, E., “Multi-layer thin-film MCM-D for the integration of high performance wireless front-end systems”, Microwave J., 44 (2), 2001, pp. 96–110.Google Scholar
8. Morrison, D., “Low-temperature cofired ceramics fuel growth of high-frequency designs”, Electronic Design, October 2000, pp. 95–102.Google Scholar
9. Scrantom, C. Q. and Lawson, J. C., “LTCC technology: Where we are and where we're going to”, proc. IEEE MTT-S Intl. Topical Symp. for Wireless Appl., Feb. 1999, pp. 193–200.Google Scholar
10. Tummala, R. R., White, G. E., Sundaram, V. and Bhattacharyam, S., “SoP: The microelectronics for the 21st century with integral passive integration”, Advancing Microelectronics, 27, 2000, pp. 13–19.Google Scholar
11. Maluf, N., “An introduction to Microelectromechanical Systems Engineering” (Boston: Artech House, 2000).Google Scholar
12. Madou, M., “Fundamentals of Microfabrication” (New York: CRC Press, 1997).Google Scholar
13. De Los Santos, H., “Introduction to Microelectromechanical (MEM) Microwave Systems” (Boston: Artech House, 1999).Google Scholar
14. Tilmans, H. A. C., “MEMS components for wireless communications”, EUROSENSORS XVI Prague Czech Republic 15–18 Sept. 2002, pp. 1–34 (on CD-ROM only)Google Scholar
15. Rebeiz, G. M., “RF-MEMS Theory, Design, and Technology” (Wiley, 2003)Google Scholar
16. Yao, Z. J., Chen, S., Eshelman, S., Denniston, D. and Goldsmith, C., “Micromachined low-loss microwave switches”, IEEE J. of Microelectromechanical Systems, 8(2), 1999, pp. 129–134.Google Scholar
17. Muldavin, J. B. and Rebeiz, G. M., “High isolation CPW MEMS shunt switches - Part 1: Modeling”, IEEE Trans. On Microwave Theory and Techniques, 48(6), June 2000, pp. 1045–1052.Google Scholar
18. Muldavin, J. B. and Rebeiz, G. M., “High isolation CPW MEMS shunt switches - Part 2: Design”, IEEE Trans. On Microwave Theory and Techniques, 48(6), June 2000, pp. 1053–1056.Google Scholar
19. Tilmans, H. A. C., et al., “Wafer-level packaged RF-MEMS switches fabricated in a CMOS fab”, proc. IEDM 2001, Washington, DC, Dec. 3–5, 2001, pp. 921–924.Google Scholar
20. Ulm, M., et al., “Capacitive RF MEMS Switches for the W-Band”, proc. 31st European Microwave Conference, London, UK, 25–27 September 2001, Volume 1, pp. 287–290.Google Scholar
21. Yao, J. J. and Frank-Chang, M., “A surface micromachined miniature switch for telecommunications applications with signal frequencies from DC up to 4 GHz”, Transducers'95, Stockholm, 1995, pp. 384–387.Google Scholar
22. Park, J. Y., et al., “Electroplated RF MEMS capacitive switches”, MEMS'2000, Miyazaki (J), 2000, pp. 639–644.Google Scholar
23. Rottenberg, X., Jansen, H., Fiorini, P., De Raedt, W. and Tilmans, H. A. C., “Novel RF-MEMS capacitive switching structures”, proc. 32nd European Microwave Conference, September 2002, Milan, Italy, pp. 809–812.Google Scholar
24. Gamble, H. S., et al., “Low-loss CPW lines on surface stabilized high-resistivity silicon”, IEEE Microwave and Guided Wave Letter, 9(10), 1999, pp. 395–397.Google Scholar
25. Jansman, A.B.M., et al., “Elimination of accumulation charge effects for High-Resistive Silicon Substrates”, 33rd European Solid-State Device Research Conf. (ESSDERC2003), Sept. 2003, Estoril, Portugal, pp. 3–6.Google Scholar
26. Goldsmith, C., et al., “Lifetime characterization of capacitive RF MEMS switches”, proc. 2001 IEEE MTT-S, Phoenix, AZ, May, 2001, pp. 227–230.Google Scholar
27. Rizk, J. B. and Rebeiz, G. M., “Digital-type RF MEMS switched capacitors”, proc. 2002 IEEE MTT-S conference, Seattle, Washington, June 2–7, 2002, pp. 1217–1220, 2002.Google Scholar
28. Holm, R., Electric Contacts: Theory and Application, Springer-Verlag, Berlin, 1967.Google Scholar
29. Sovero, E. A., et al., “Monolithic GaAs PHEMT MMICs intergrated with high performance MEMS microrelays”, proc. SBMO/IEEE MTT-S IMOC'99, Rio de Janeiro, Brazil, 1999, pp. 257–260, 1999.Google Scholar
30. Wang, K., Wong, A.-C. and Nguyen, C. T.-C., “VHF free-free beam high-Q micromechanical resonators”, J. of Microelectromechanical systems, 9(3), 2000, pp. 347–360.Google Scholar
31. Franke, E., et al., “Post-CMOS Modular Integration of Poly-SiGe Microstructures using Poly-Ge Sacrificial Layers,” Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, June 2000, pp. 18–21.Google Scholar
32. Sedky, S., et al., “Poly SiGe, a promising material for monolithic integration with the driving electronics”, Sensors and Actuators, 97–98, 2002, pp. 503–511.Google Scholar
33. Witvrouw, A., et al., “Poly SiGe, a superb material for MEMS”, Fall Meeting MRS2003, Boston, Dec. 2003.Google Scholar
34. Bhave, S. A., et al., “Poly-SiGe: A high-Q structural material for integrated RF MEMS”, proc. Solid-State Sensor and Actuator Workshop, Hilton Head Island, South Carolina, June 2–6, 2002, pp. 34–37.Google Scholar
35. Gooch, R., Schimert, T., McCardel, W., Ritchey, B., Gilmour, D. and Koriarz, W., “Wafer-level vacuum packaging for MEMS”, J. Vac. Sci. Technol. A, 17(4), Jul/Aug 1999, pp. 2295–2299.Google Scholar
36. Tilmans, H. A. C., et al., “The Indent Reflow Sealing (IRS) Technique - A method for the fabrication of sealed cavities for MEMS devices,” J. of Microelectromechanical systems, 9, June 2000, pp. 206–217.Google Scholar
37. Lin, L., “MEMS post-packaging by localized heating”, IEEE Trans. Adv. Pack., 23, 2000, pp. 608–616.Google Scholar
38. Najafi, K., “Micropackaging technologies for integrated Microsystems: Applications to MEMS and MOEMS”, Proceedings of SPIE, vol. 4979, 2003, pp. 1–19.Google Scholar
39. Guckel, H. and Burns, D. W., “A technology for integrated transducers”, proc. Transducers'85, Philadelphia, USA, June 11–14, 1985, pp. 90–92.Google Scholar
40. Mastrangelo, C. H. and Muller, R. S., “Vacuum sealed silicon micromachined incandescent light source”, proc. IEDM 1989, pp. 503–506.Google Scholar
41. Guckel, H., Sniegowski, J J., Cristenson, T. R. and Raissi, F., “The application of fine-grained tensile polysilicon to mechanically resonant transducers”, Sensors and Actuators, A21–A23, 1990, pp. 346–351.Google Scholar
42. Lin, L., et al., “Vacuum encapsulated lateral microresonators”, Transducers'93, Yokohama, 1993, pp. 270–273.Google Scholar
43. Legtenberg, R. and Tilmans, H. A. C., “Electrostatically driven vacuum encapsulated polysilicon resonators, Part I: “Design and fabricatin”, Sensors and Actuators A, 45, 1994, pp. 57–66.Google Scholar
44. Tilmans, H. A. C. and Legtenberg, R., “Electrostatically driven vacuum encapsulated polysilicon resonators, Part II: Theory and performance”, Sensors and Actuators A, 45, 1994, pp. 67–84.Google Scholar
45. Stahl, H., et al., “Thin film encapsulation of acceleration sensors using polysilicon sacrificial layers”, proc. Transducers'03, Boston, USA, June 8–12, 2003, pp. 1899–1902.Google Scholar
46. Rusu, C., Jansen, H., Gunn, R. and Witvrouw, A., “Self-aligned 0-level sealing of MEMS devices by a two layer thin film reflow process”, proc. DTIP 2003, 5–7 May, 2003, Cannes, France, pp. 245–250.Google Scholar
47. Stark, B. H. and Najafi, K., “An ultra-thin hermetic package utilizing electroplated gold”, proc. Transducers'01, Munich, Germany, June 2001, pp. 194–197.Google Scholar
48. Cheng, Y. T., Hsu, W. T., Lin, L., Nguyen, C. T. and Najafi, K., “Vacuum packaging technology using localized aluminum/silicon-to-glass bonding”, proc. MEMS 2001, Interlaken, Switzerland, Jan. 21–25, 2001, pp. 18–21.Google Scholar
49. Traeger, R. K., “Hermeticity of polymeric lid sealants”, proc. 25th ECTC, 1976, pp. 361–367.Google Scholar
50. Jourdain, A., et al., “Investigation of the hermeticity of BCB-sealed cavities for housing (RF-)MEMS devices”, proc. MEMS2002, Las Vegas, USA, Jan. 20–24, 2002, pp. 677–680.Google Scholar
51. Gilleo, K. and Corbett, S., “Getters-Molecular scavengers for packaging”, HDI, Jan. 2001, pp. 26–29.Google Scholar
52. Fujii, M., et al., “RF MEMS switch with wafer level package utilizing frit glass bonding”, proc. 32nd European Microwave Conference, Milan, Italy, 23–27 September 2002, pp. 279–281 (vol.1).Google Scholar
53. Maragomenos, A., et al., “Silicon micromachined packages for RF MEMS switches”, proc. 31st European Microwave Conference, London, UK, September 25–27, 2001, pp. 271–274 (vol. 1).Google Scholar
54. Jourdain, A., et al., “The influence of 0-level packaging on the performance of RF-MEMS devices”, proc. 31st European Microwave Conf. (EUMC2001), London, UK, September 2001, pp. 403–406, 419.Google Scholar
55. http://www.dow.com (click search and enter BCB or Cyclotene).Google Scholar
56. Jourdain, A., Rottenberg, X., Carchon, G. and Tilmans, H. A. C., “Optimization of 0-level packaging for RF-MEMS devices”, proc. Transducers'03, Boston, USA, June 8–12, 2003, pp. 1915–1918.Google Scholar
57. Jourdain, Anne, Ziad*, Hocine, Moor, Piet De and Tilmans, Harrie A.C., “Wafer-scale 0-level packaging of RF-MEMS devices using BCB”, proc. DTIP 2003, 5–7 May, 2003, Cannes, France, pp. 239–244.Google Scholar
58. Oberhammer, J., Niklaus, F. and Stemme, G., “Selective wafer-level adhesive bonding with benzocyclobutene for fabrication of cavities”, Sensors and Actuators A, vol. 105, 2003, pp. 297–304.Google Scholar
59. Liu, Y., Li, X., Abe, T., Haga, Y. and Esashi, M., “A thermomechanical relay with microspring contact array”, proc. MEMS 2001, Interlaken, Switzerland, 21–25 January, 2001, pp. 220–223.Google Scholar
60. Park, Y.-K., et al. “A novel low-loss wafer-level RF-MEMS packaging of the RF-MEMS devices”, proc. MEMS2002, Las Vegas, 2002, pp. 681–684.Google Scholar
61. Tilmans, H. A. C., et al., “A fully-packaged electromagnetic microrelay,” MEMS '99, Orlando, 1999, pp. 25–30.Google Scholar
62. Chandrasekhar, , Brebels, S., Stoukatch, S., Beyne, E., De Raedt, W. and Nauwelaers, B., “The influence of packaging materials on RF performance”, Microelectronics Reliability, vol. 43, 2003, pp. 351–357.Google Scholar
63. Ito, M., Maruhashi, K., Senba, N., Takahashi, N. and Ohata, K., “Low cost multi-layer ceramic package for flipchip MMIC up to W-band”, 2000 IEEE MTT-S digest, 2000, pp. 57–60.Google Scholar
64. Saias, D., et al., “An above-IC MEMS switch”, IEEE Intl. Solid-State Circuits Conference, 2003, pp. 206–07.Google Scholar
65. Lim, K., et al., “RF-System-On-Package (SOP) for wireless communications”, IEEE Microwave magazine, March 2002, pp. 88–99.Google Scholar
66. Davidson, E., “SoC or SoP? A balanced approach”, 2001 ECTC, Orlando, Fl., May/June 2001, pp. 529–534.Google Scholar
67. Tilmans, H. A. C., De Raedt, W. and Beyne, E., “MEMS for wireless communications: “from RF-MEMS components to RF-MEMS-SiP”, J. of Micromechanics and Microengineering, 13(4), July 2003, pp. S139–S163.Google Scholar