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The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers

Published online by Cambridge University Press:  22 February 2011

Frank Baldwin ,
Paul H. Holloway ,
Mark Bordelon  and
Thomas R. Watkins
Frank Baldwin
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Paul H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Mark Bordelon
Affiliation:
Harris Semiconductor, Melbourne, FL 32901
Thomas R. Watkins
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

The stresses in Al-0.75w%Si-0.5w%Cu unpatterned metallization on silicon wafers have been measured using substrate curvature and x-ray diffraction techniques after quenching in liquid nitrogen. Stresses were measured with and without phospho-silicate glass overlayers and SiO2 underlayers, and thermal cycling followed by relaxation at room temperature. It was found that cooling the substrates to 77 K and warming to room temperature caused the metallization stress to go from tensile to compressive. Subsequent heating of the substrates to above ∼70°C followed by cooling to room temperature caused the stress to become tensile. Both compressive and tensile stresses were found to relax at room temperature with a time constant of 2.3 ± 0.2 hours. The magnitude of stress relaxation was a function of temperature, being about 20 MPa after heating to 240°C. The metallization exhibited both compressive and tensile flow stresses of ∼100 MPa near room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 233
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A., IEEE IRPS, 22:6–8, 1984.Google Scholar
2 Korhonen, M. A., Paszkiet, C. A., and Li, Chi-Yu, J. Appl. Phys., 69(12):8083–91, 1991.Google Scholar
3 Flinn, Paul A., Mack, Anne Sauter, Besser, Paul R., and Marieb, Thomas N., MRS Bulletin, 18(12):26–35, 1993.Google Scholar
4 Toulukian, Y. S., et al. Thermophysical Properties of Matter, 13, IFI/Plenum Press, 1977.Google Scholar
5 Gardner, Donald S. and Flinn, Paul A., J. Appl. Phys., 67(4):1831–44, 1990.Google Scholar
6 Paszkiet, Christine Ann, Ph.D. Dissertation, Cornell University, 1992.Google Scholar
7 Flinn, Paul A. and Chiang, Chien, J. Appl. Phys., 67(6):2927–31, 1990.Google Scholar
8 Flinn, Paul A., Gardner, Donald S., and Nix, William D., IEEE Trans. Electron. Devices, 34(3):689–99, 1987.Google Scholar
9 Stoney, G. G., Proc. Roy. Soc. London, A82:172–5, 1909.Google Scholar
10 Sinha, A. K. and Sheng, T. T., Thin Solid Films, 48:117–26, 1978.Google Scholar
11 Brantley, W. A., J. Appl. Phys., 44(1):534–5, 1973.Google Scholar
12 Sinha, A. K., Levinstein, H. J., and Smith, T. E., J. Appl. Phys., 49(4):2423–6, 1978.Google Scholar
13 Noyan, I. C. and Cohen, J. B. in Residual Stress. Measurement by Diffraction and Interpretation, (Springer-Verlag, 1987) pp. 102, 122-5.Google Scholar
14 Hershkovitz, M., Blech, I. A., and Komem, Y., Thin Solid Films, 130:87–93, 1985.Google Scholar
15 Ambrée, P., Kreller, F.. Wolf, R., and Wandel, K., J. Vac. Sci Technol. B, 11(3):614–7, 1993.Google Scholar
16 Korhonen, M. A., Paszkiet, C. A., Black, R. D., and Li, Chi-Yu, Scripta Metallurgica et Materialia, 24:2297–302, 1990.Google Scholar
17 Chung, D. H. and Buessem, W. R. in Anisotropy of Single-Crystal Refractory Compounds II, (Plenum Press, 1968), pp. 217–45.Google Scholar
18 Hilley, M. E., editor, Residual Stress Measurement by X-Ray Diffraction -SAE J784a., (Society of Automotive Engineers, 1971). pp.20, 48.Google Scholar
19 Draper, Bruce L. and Thomas Hill, A., J. Vac. Sci Technol. B, 9(4):1956–62, 1991.Google Scholar