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Influence of dopant nature on the TCO properties of ZnO:M (M=Al, Ga, Sn, Si, Ge) thin films

Published online by Cambridge University Press:  18 August 2011

J. Clatot ,
G. Campet ,
M. Jean ,
M. Nistor  and
A. Rougier
J. Clatot
Affiliation:
LRCS, 33 rue St Leu, 80039 Amiens, France
G. Campet
Affiliation:
CNRS, Université de Bordeaux, ICMCB, 87 av. du Dr. Schweitzer, Pessac, F-33608 France
M. Jean
Affiliation:
Institut des Matériaux, Université de Rouen, LASTSM, BP12, 76801 Saint Etienne du Rouvray Cedex, France
M. Nistor
Affiliation:
National Institute for Lasers, Plasmas and radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele, Romania
A. Rougier
Affiliation:
LRCS, 33 rue St Leu, 80039 Amiens, France
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Abstract

Aiming at clarifying the opto-electronic properties of ZnO based n-type Transparent Conducting Oxides, TCOs, properties of ZnO thin films are studied as a function of cationic doping. In addition to commonly reported, Al and Ga trivalent dopant, similar performances are reported for Si doping. In the visible region, ZnO:Si (3 %) thin film exhibit a transmittance higher than 80 % for a resistivity as low as 8x10-4 Ω.cm when grown at 100 °C under 1.0 Pa oxygen pressure. The influence of tetravalent cations as dopant is also investigated through Sn and Ge additions. It shows that not only the oxidation state plays a role but also the cation nature. Indeed, ZnO:Sn thin films are insulating whereas the ZnO:Ge thin films are conductive with resistivity values higher than the ones of ZnO:Si thin films.

Keywords

ablationtransparent conductorZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1328: Symposium H – Electrochromic Materials and Devices , 2011 , mrss11-1328-h04-01
Copyright
Copyright © Materials Research Society 2011

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References

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