Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-05-07T06:37:30.901Z Has data issue: false hasContentIssue false

Atomic Force Microscopy Study of Stabilized Quasi-Amorphous Carbon in the Range of Thickness from 5 nm To 300 μm

Published online by Cambridge University Press:  10 February 2011

Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
J. Z. Wan
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
Benjamin F. Dorfman
Affiliation:
Atomic Scale Design, Inc., 90 Lupton Hall, State University of New York-Farmingdale, Farmingdale, NY 11735
Get access

Abstract

A new hard sp2-sp3 carbon stabilized by non-stoichiometric silica SiOx has been fabricated which combines a graphite-like layered structure with diamond-like mechanical properties, thermal stability and a very low density (≈ 1.6 g/cm3). This substance, which we refer to a quasi-amorphous material (QUASAM), has considerable potential applications as either thin films or bulk material since it can be grown as thick as 300 μm. Not only is the fine surface structure of crucial importance for thin films, but also the steadiness of a smooth growth front is a key factor for bulk material synthesis. Using atomic force microscopy (AFM) we have undertaken study of the surfaces/interfaces of such material over a wide range of thicknesses (5 nm < tf < 300 μm), including two free standing films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dorfman, B.F., Asoka-Kumar, P., Poliak, F.H., Wan, J.Z. and Zhu, Q., Symposium I, Materials Research Society meeting, Boston, Dec. 1996.Google Scholar
2. Dorfman, V.F., Thin Solid films, 212, 267 (1992);Google Scholar
Dorfman, V.F., Bozhko, A., Pypkin, B.N., Borra, R.T., Srivatsa, A.R., Zhang, H., Skotheim, T.A., Khan, I., Rodichev, D. and Kirpilenko, G., Thin Solid films, 212, 274 (1992).Google Scholar
3. Dorfman, B., Abriazov, M., Pypkin, B., Strongin, M., Yang, X.-Q., Yan, D., Poliak, F.H., Grow, J. and Levy, R., Mat. Res. Soc. Symp. Proc., 351, 43 (1994);Google Scholar
Dorfman, B., Abriazov, M., Poliak, F.H., Yan, D., Strongin, M., Yang, X.-Q. and Rong, Z.-Y., Mat. Res. Soc. Symp. Proc., 349, 547 (1994).Google Scholar
4. Rong, Z.-Y., Abriazov, M., Dorfman, B., Strongin, M., Yang, X.-Q., Yan, D. and Poliak, F.H., Appl. phys. Lett., 65, 1379 (1994).Google Scholar
5. Dorfman, B., Abraizov, M., Poliak, F.H., Eby, R., Rong, Z-Y., Strongin, M. and Yang, X-Q., Proceedings of the Third International Conference on the Applications of Diamond Films and Related Materials, ed. by Feldman, A., Tzeng, Y., Yarbrough, W.A., Yoshika, M. and Murakawa, M., NIST Special Publication 885, p. 769 (1995).Google Scholar
6. Asoka-Kumar, P., Dorfman, B.F., Abraizov, M.G., Yan, D. and Poliak, F.H., J. Vac Sci. Technol., A13, 1044 (1995).Google Scholar
7. Dorfman, B. and Poliak, F.H., to be published in Thin Solid films.Google Scholar
8. Hanson, K.J., Sapjeta, J. and Higashi, G.S. in Proceedings of the ECS Symposium on Diagnostic Techniques for Semiconductor Materials and Devices. (Electrochemical Society, Pennington, 1995) ed. by Schroder, D., Benton, J. and Rai-Choudhury, J., ECS Proc 94–33, 355 (1994).Google Scholar
9. Margenau, H. and Murphy, G.M., The Mathematics of Physics and Chemistry. Van Nostrand, Princeton, 1956.Google Scholar