Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T16:08:13.428Z Has data issue: false hasContentIssue false

High Frequency Loss Mechanism in Polymers Filled with Dielectric Modifiers

Published online by Cambridge University Press:  01 February 2011

J. Obrzut
Affiliation:
Polymers Division, National Institute of Standards and Technology, Gaithersburg, MD 20899.
A. Anopchenko
Affiliation:
Polymers Division, National Institute of Standards and Technology, Gaithersburg, MD 20899.
K. Kano
Affiliation:
Polymers Division, National Institute of Standards and Technology, Gaithersburg, MD 20899.
H. Wang
Affiliation:
Michigan Technological University, Houghton, MI 49931.
Get access

Abstract

We analyzed the high frequency dielectric relaxation mechanism in high-k composite materials using film substrates made of low loss organic resin filled with ferroelectric ceramics and with single wall carbon nanotubes (SWNT). We performed broadband permittivity measurements of high-k film substrates at frequencies of 100 Hz to about 10 GHz. In order to analyze the effect of the dielectric thickness, dielectric constant, loss and conductive loss on the impedance characteristics, we used a High Frequency Structure Simulator to perform a full wave numerical analysis of several power planes. Small angle neutron scattering (SANS) was used to probe the dispersion of SWNTs in polymer matrices. It was found that organic-ceramic composites exhibit an intrinsic high frequency relaxation behavior that gives rise to frequency dependent dielectric loss. The highest frequency relaxation process dominates the overall loss characteristic. In the case of polymers modified with SWNTs, we observed that 2% mass fraction of p-doped semi-conducting SWNTs increases the dielectric constant by 3 orders of magnitude, in apparent violation of the mixing-rule. The hybrid material appears to have preferential coupling within the dispersed phase. The experimental data and numerical simulation indicate that these materials can play a significant role as embedded passive devices with functional characteristics superior to that of discrete components.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Peiffer, J. S., ‘A Novel Embedded Capacitance Material’, Printed Circuit Fabrication, Feb. 2001 pp. 48.Google Scholar
2. Hubing, T., and Xu, M., IPC APEX 2001 Technical Conference, Jan 14–18, 2001, San Diego, CA, IPC Proc. 2001, AT32.Google Scholar
3. Haggemmueller, R., Chem. Phys. Lett., vol. 330, pp. 210 (2000)Google Scholar
4. Noda, N. and Obrzut, J., “High frequency dielectric relaxation in polymers filled with ferroelectric ceramics”, Mat. Res. Symp. Proc., vol. 698, pp. EE3.8.16, (2002).Google Scholar
5. Zhou, W.; Ooi, Y.H.; Russo, R.; Papanek, P.; Luzzi, D.E.; Fischer, J.E.; Bronikowski, M.J.; Willis, P.A.; Smalley, R.E. Chem. Phys. Lett., 6, 350 (2001)Google Scholar
6. Chen, J.; Hamon, M.A.; Hu, H.; Chen, Y.; Rao, A.M.; Eklund, P.C.; Haddon, R.C. Science, 95, 282 (1998).Google Scholar
7. Du, F.; Fischer, J.E.; Winey, K.I. Submitted to J. Polym. Sci. Part B: Polym Phys. (unpublished).Google Scholar
8. Obrzut, J., Noda, N. and Nozaki, R., “Broadband characterization of high-dielectric constant films for power-ground decoupling”, IEEE Trans. Instrum. Meas., vol. 51, pp. 829832, 2002.Google Scholar
9. Obrzut, J., Anopchenko, A., IEEE Instr. Meas. Tech. Conf., 20–22 May, 2003, IMTC'03 Proc. 2 1074 (2003).Google Scholar
10. Davis, M., Gould Electronics, Internal Report, 2002.Google Scholar