Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-05T14:27:31.514Z Has data issue: false hasContentIssue false

Vitreous Chalcogenide Semiconductors for Gas Sensing Application

Published online by Cambridge University Press:  01 February 2011

Serghei V. Dmitriev
Affiliation:
Department of Industrial and Environmental Chemistry, Moldova State University, 60, A. Mateevici Str., Chisinau, MD-2009, Moldova
Igor V. Dementiev
Affiliation:
Department of Physics, Moldova State University, 60, A. Mateevici Str., Chisinau, MD-2009, Moldova
Get access

Abstract

Report presents results of research aimed the investigation of possibility to use such chalcogenide materials as vitreous As2S3, As2Se3 and their solid solutions for gas sensors applications. For a long time these materials were well-known as materials mostly used for optical information registration. Developed approach allows to widening the sphere of application of given materials and create new class of gas sensitive devices.

Thin film gas sensitive elements on the base of solid solutions of (As2S3)x-(As2Se3)1−x (where x=0; 0.3; 0.5; 0.7 and 1.0) were obtained by means of the thermal evaporation under vacuum conditions 10−5 Torr. Thin films can be deposited on both hard and flexible substrate. Formed films had specific resistance on the level 1010–1014 Ohm.cm (on dependence on composition) at the thickness of 1–2 μm.

It was established that CGS thin films possess gas sensitivity S, determined as S=(Ggas-Gait)/Gair, on the level 2–3 relative units for CO and 7–8 for hydrogen at the 100 ppm concentration levels of both gases in atmosphere already at the room temperature that allows to excluding the heater from the gas sensor construction decreasing through that both manufacturing and operational cost.

It is concluded that chalcogenide semiconductor materials can be considered as perspective materials for gas sensor application, including space exploration application.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lundstrom, I., Ederth, T., Kariis, H. t al., Sensors and Actuators B23, 127 (1995)Google Scholar
2. Williams, D.E., Semiconducting oxides as gas sensitive resistors B57 1 (1999)Google Scholar
3. Gopel, W., Schierbaum, K.D., Sensors and Actuators B26–27, 112 (1995)Google Scholar
4. Madou, M.J., Morrison, S.R., Chemical sensing with solid-state devices. Academic Press, New York, 1989, p.75 Google Scholar
5. Lantto, V., in Gas Sensors, edited by Sberveglieri, G. (Kluwer Academic Publishers), Dordrecht, 1993 Google Scholar
6. Vincenzi, D., Butturi, M.A., Carotta, M.C. et al., Sensors and Actuators B77, 91 (2001)Google Scholar
7. Marian, S., Tsiulyanu, D., Marian, T. et al., Pure Appl. Chem. 73, p.2001 (2001)Google Scholar
8. Tsiuleanu, D., Marian, S., Miron, V., Patent MD 1725 (31 August 2001)Google Scholar
9. Andries, A.M., Semiconductors, 32, 8 (1998) pp. 867872 Google Scholar
10. Kolobov, A.V., Tanaka, J., Journal of Optoelectronics and Advanced Materials, 4, 3 (2002) pp. 679686 Google Scholar
11. Teteris, J., Journal of Optoelectronics and Advanced Materials, 4, 3 (2002) pp. 687697 Google Scholar
12. Borisova, Z.U., Glassy semiconductors, Plenum press, NY, 1981 Google Scholar
13. Andriesh, A.M., Iovu, M.S., Shutov, S.D., Journal of Optoelectronics and Advanced Materials, 4, 3 (2002) pp. 631647 Google Scholar
14. Ishimov, V.M., Senokosov, E.A., Dementiev, I.V. et al., Technical Physics Letters, 28, 8 (2002) 699701 Google Scholar
15. Aggarwal, I.D., Sanghera, J.S., Journal of Optoelectronics and Advanced Materials, 4, 3 (2002) pp. 665678 Google Scholar
16. Moseley, P.T., Sensors and Actuators B 149 (1992)Google Scholar