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Surface Photovoltage Study of Indium Phosphide Nanowire Networks

Published online by Cambridge University Press:  22 June 2011

Andrew J. Lohn
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 USA Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz – NASA Ames Research Center, Moffett Field, CA 94035 USA
Jin-Woo Han
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA
Nobuhiko P. Kobayashi
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 USA Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz – NASA Ames Research Center, Moffett Field, CA 94035 USA
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Abstract

Surface photovoltage of three-dimensional networks composed of fused indium phosphide (InP) nanowires is discussed. Particular emphasis is given to the dependence of surface photovoltage on the chopping frequency of light that excites the nanowire network as observed in regions which are laterally separated from the excitation. The nanowire network is modeled as a thin film to simplify numerical solutions to transport equations which aids in the interpretation of diffusion and drift of photo-generated carriers within the nanowire network.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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