Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T13:30:26.423Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristic Comparison Of Epitaxial PZT And PMN-PT Films Grown On (100)cSrRuO3//(100)SrTiO3 Substrates By Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

Shintaro Yokoyama ,
Satoshi Okamoto ,
Keisuke Saito ,
Takashi Iijima ,
Hirotake Okino ,
Takashi Yamamoto ,
Ken Nishida ,
Takashi Katoda ,
Joe Sakai  and
Hiroshi Funakubo
Shintaro Yokoyama
Affiliation:
yokoyama@iem.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa, 226-8502, Japan, +81-45-924-5446, +81-45-924-5398
Satoshi Okamoto
Affiliation:
sokamoto@iem.titch.ac.jp, Japan
Keisuke Saito
Affiliation:
keisuke.saito@bruker-axs.jp, Japan
Takashi Iijima
Affiliation:
iijima-t@aist.go.jp, Japan
Hirotake Okino
Affiliation:
hokino@nda.ac.jp, Japan
Takashi Yamamoto
Affiliation:
ytakashi@nda.ac.jp, Japan
Ken Nishida
Affiliation:
nishida.ken@kochi-tech.ac.jp, Japan
Takashi Katoda
Affiliation:
katoda.takashi@kochi-tech.ac.jp, Japan
Joe Sakai
Affiliation:
joo@jaist.ac.jp, Japan
Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp, Japan
Get access

Abstract

We grew the epitaxial Pb(Zr1-xTix)O3 [PZT] and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 [PMN-PT] films, above 2 μm in thickness, on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). PbTiO3 content (x) dependencies of the crystal structure, dielectric and piezoelectric properties were systematically investigated for these films. The constituent phase changed from a rhombohedral (pseudocubic) single phase, a mixture phase of rhombohedral (pseudocubic) and tetragonal phases, and a tetragonal single phase with increasing x for both of PZT and PMN-PT films. The mixture phase region was observed when x=0.40−0.60 for PZT films and x=0.40−0.55 for PMN-PT films, which became wider than that reported ones for PZT sintered bodies and PMN-PT single crystals. In addition, x value moves to the higher one than that reported for the single crystal and/or the sintered body in case of PMN-PT films, while was almost the same in case of PZT films. The dependence of relative dielectric constant εr was maximum at the mixed phase region for both films, which were similar to the case of their bulk materials. The higher value of εr was ascertained for the PMN-PT films compared with PZT films, however, the magnitude was lower than the reported one for bulk materials. The longitudinal electric-field-induced strain Δx33 and transverse piezoelectric coefficient e31,f for PZT films were also maximum at the mixed phase region, on the other hand, that for PMN-PT films were maximum at larger x edge of rhombohedral (pseudocubic) region. Almost the same order of Δx33 was observed under applied electric fields up to 100 kV/cm, while larger e31,f was observed in PMN-PT films compared with the case of PZT films. e31,f coefficients of ∼−8.9 C/m2 and ∼−11.0 C/m2 were calculated for the PZT film with x=0.46 and for the PMN-PT film with x=0.39, respectively.

Keywords

piezoresponseepitaxychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-29
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lavric, D., Rao, R. A., Gan, Q., Krajewski, J. J. and Eom, C. B., Integr. Ferroelectr. 21, 499 (1998).Google Scholar
2 Stemmer, S., Bai, G. R., Browning, N. D. and Streiffer, S. K., J. Appl. Phys. 87, 3526 (2000).Google Scholar
3 Nagashima, K., Aratani, M. and Funakubo, H., Jpn. J. Appl. Phys. 39, L996 (2000).Google Scholar
4 Sumi, A., Takahashi, K., Yokoyama, S., Morioka, H., Yoshimoto, M. and Funakubo, H., Appl. Phys. Lett. 87, 052112 (2005).Google Scholar
5 Saito, K., Kurosawa, T., Akai, T., Oikawa, T. and Funakubo, H., J. Appl. Phys. 93, 545 (2003).Google Scholar
6 Ragini, , Ranjan, R., Mishra, S. K. and Pandey, D., J. Appl. Phys. 92, 3266 (2002).Google Scholar
7 Noheda, B., Cox, D. E. and Shirane, G., Phys. Rev. B 66, 054104 (2002).Google Scholar
8 Otsu, M., Funakubo, H., Shinozaki, K. and Mizutani, N., Trans. Mater. Res. Soc. Jpn. 14B, 1655 (1994).Google Scholar
9 Jaffe, B., Roth, R. S. and Marzullo, S., J. Res. Nat. Bur. Stand. 55, 239 (1955).Google Scholar
10 Yokoyama, S., Honda, Y., Morioka, H., Okamoto, S., Iijima, T., Matsuda, H., Saito, K., Yamamoto, T., Okino, H., Sakata, O., Kimura, S. and Funakubo, H., J. Appl. Phys. 98, 094106 (2005).Google Scholar
11 Choi, S. W., Shrout, T. R., Jang, S. J. and Bhalla, A. S., Ferroelectrics 100, 29 (1989).Google Scholar
12 Yokoyama, S., Okamoto, S., Okamoto, S., Matsuda, H., Iijima, T., Saito, K., Okino, H., Yamamoto, T. and Funakubo, H., J. Appl. Phys. 98, 086112 (2005).Google Scholar
13 Nagarajan, V., Alpay, S. P., Ganpule, C. S., Nagaraj, B. K., Aggarwal, S., Williams, E. D., Roytburd, A. L. and Ramesh, R., Appl. Phys. Lett. 77, 438 (2000).Google Scholar
14 Park, S. E. and Shrout, T. R., IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44, 140 (1997).Google Scholar
15 Feng, Z., Li, D., Luo, H.. Li, S. and Fang, D., J. Appl. Phys. 97, 024103 (2005).Google Scholar