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Growth of cubic GaN on Si (100) Substrates

Published online by Cambridge University Press:  01 February 2011

Suzuka Nishimura ,
Shigeya Naritsuka  and
Kazutaka Terashima
Suzuka Nishimura
Affiliation:
k.terashima@solartes.com, Shonan Institute of Technology, Materials Science and Technology, 1-1-25 Tshujido-nishikaigan, Fujisawa, N/A, 2518511, Japan, +81-466300226, +81-466300226
Shigeya Naritsuka
Affiliation:
narit@ccmfs.meijo-u.ac.jp, Meijyo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tenpakuku, Nagoya, N/A, N/A, Japan
Kazutaka Terashima
Affiliation:
terasima@mate.shonan-it.ac.jp, Shonan Institute of Technology, Materials Science and Technology, 1-1-25 Tsujido-nishikaigan, Fujisawa, N/A, 2518511, Japan
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Abstract

We have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide(BP) buffer crystals. We have successfully grown BP crystals by MOVPE technique with electrically n-type and thickness deviation is within several % along 2inch wafer under undoped conditions. The electrical conductivity is less than 0.5mohm∙cm. We have preliminary grown GaN by RF-MBE technique, before we carry out mass-producing MOVPE on larger diameter Si substrates. It has been found the cubic type GaN has been successfully grown on the substrates by measuring X-ray diffraction. The crystal quality and defect generation were observed by TEM. It has been found that there are much more dislocations than 109cm-2 generated at GaN/BP interface.

Keywords

nitrideIII-Vepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 916: Symposium DD – Solid-State Lighting Materials and Devices , 2006 , 0916-DD05-08
Copyright
Copyright © Materials Research Society 2006

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References

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