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Vacancy Injection Enhanced Al-Ga Inter-diffusion in Si FIB Implanted Superlattice

Published online by Cambridge University Press:  22 February 2011

P. Chen  and
A.J. Steckl
P. Chen
Affiliation:
Nanoelectronics LaboratoryUniversity of Cincinnati, Cincinnati, OH 45221–0030
A.J. Steckl
Affiliation:
Nanoelectronics LaboratoryUniversity of Cincinnati, Cincinnati, OH 45221–0030
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Abstract

The Al-Ga inter-diffusion induced by Si FIB implantation and subsequent RTA were investigated in an Al0.3Ga0.7As/GaAs superlattice with equal 3.5 nm barrier and well widths. Si++ was accelerated to 50 kV as well as 100kV and implanted parallel to sample normal at doses ranging from 1013 to 1015/cm2. The effect of rapid thermal anneal of 10s at 950°C was characterized by SIMS technique. In the implanted region, the inter-diffusion as well as compositional mixing were significantly enhanced. An ion dose as low as 1×1014/cm2 results in a two-order of magnitude increase in the inter-diffusion coefficient, to a value of 4.5×10-14 cm2/sec, in contrast to 1.3×10-16 cm2/sec from RTA-only. This produces a mixing parameter of σ90%. A strong depth dependence of the mixing process was observed at implantation energy of 100keV with a pinch-off region being formed at certain depth. It is noticed that the depth where this enhancement occurred is not associated with either the maximum concentration of Si ions or of vacancies. Instead, it represents the positive maximum of the second derivative of the vacancy profile, which in turn represents the vacancy injection generated by presence of a transient vacancy concentration gradient. Based on this, a theoretical model was developed using vacancy injection as responsible for mixing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 37
Copyright
Copyright © Materials Research Society 1994

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