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Fundamentals of Post-CMP Cleaning

Published online by Cambridge University Press:  01 February 2011

Jin-Goo Park  and
Tae-Gon Kim
Jin-Goo Park
Affiliation:
jgpark@hanyang.ac.kr, Hanyang University, Division of Materials and Chemical Engineering, Sa1-dong Gyeonggi-do, Ansan, 426-791, Korea, Republic of, +82-31-400-5226, +82-31-417-3701
Tae-Gon Kim
Affiliation:
tgon@hanafos.com, Hanyang University, Division of Materials and Chemical Engineering, Ansan, 426-791, Korea, Republic of
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Abstract

Post CMP cleaning is necessary for contaminant removal after CMP process. The zeta potential of slurry particle and substrate has been considered to be a critical factor in terms of particle adhesion and removal. The fundamental research such as the calculation and measurement of adhesion forces between slurry particle and wafer surfaces can enhance the understanding of cleaning mechanism and development of cleaning process. The presence of more than two different materials during CMP introduces new defects at the materials interface, corrosion and severe scratches. Device specific chemistry and cleaning process should be introduced and developed for future and current CMP. The highest particle removal efficiency is observed when using cleaning solutions that yields the lowest adhesion force. The effect of frictional and adhesion forces attributed to slurry particles on the quality of Cu surfaces was experimentally investigated during metal CMP process. The magnitude of the adsorption of the organic acid on the slurry particle surfaces can have a significant effect on the frictional behavior as well as the adhesion force. Higher particle adhesion forces resulted in higher friction and might induce defects such as particle contamination and scratches on the polished surface after polishing. The magnitude of particle adhesion force on wafer surfaces in slurries can be directly related to the frictional forces and polished surface quality during CMP process. As low k and poly or bare silicon polishing introduced in fabrication process, the hydrophobicity of these surfaces could affect the defects after polishing. The control of wettability during and after polishing becomes more important in reducing the defects. The organic particles are major defects during metal and poly silicon CMP which may be caused by the surface reaction of organic sources with surfaces.

Keywords

CMPsemiconductingsurface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C02-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Steigerwald, J. M., Murarka, S. P., Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials (John Wiley & Sons, Inc., 1997) p. 1.Google Scholar
2. Wang, Y. L., Wang, T.C., Wu, J., Tseng, W.T., Lin, C.F., Thin Solid Film, 332, 385 (1998).Google Scholar
3. Zhang, L., Ph.D. dissertation, University of Arizona, (1998).Google Scholar
4. Lee, W., Torek, K. J., Palsulich, D. A., and Weston, L., Mater. Res. Soc. Symp. Proc. 477, 57 (1997).Google Scholar
5. Li, S. H., Banviller, H., Augagneur, C., Miller, B., Nabot-Hensaff, M. P. and Wooldridge, K., CMP-MIC Conference, 165 (1998).Google Scholar
6. Kern, W. and Puotinen, D. A., RCA Rev. 31, 187 (1970).Google Scholar
7. Wolf, S. and Tauber, R. N., Silicon Processing for the VLSI Era, 2nd ed. (Lattice Press, 2000) vol. 1, Process Technology.Google Scholar
8. Myers, T. L., Fury, M., and Krusell, W. C., Solid State Technol. 38, (1995).Google Scholar
9. Tardif, F., Constant, I., Lardin, T., Demoiliens, O., Fayolle, M. and Gobil, Y., MAMS 97 Vallard de Lans, France (1997).Google Scholar
10. Tardif, F., “Semiconductors and Semimetals”, 63, 186 (2000).Google Scholar
11. Prasad, J., Front-end Wafer Cleaning Challenges, IBID (International Baccalaureate) Press. Oct. (2004).Google Scholar
12. Hand, Aaron, “Damage-free Cleaning Beyond 65 nm” (IBID Press, 2005) Jan.Google Scholar
13. Scriven, L. E. and Sternling, C. V., Nature, 187, 186 (1960).Google Scholar
14. Marra, J. and Huethorst, J. A. M., Langmuir, 7, 2748 (1991).Google Scholar
15. Krupp, H., Particle Adhesion: Theory and Experiment, Advances in Colloid and Interface Science (Elsevier, New Your, 1967).Google Scholar
16. Visser, J., Particle Science and Technology, 13 169 (1995).Google Scholar
17. Israelachvili, J. N., Intermolecular and Surface Forces, 2nd ed. (Academic Press, London, 1992).Google Scholar
18. Krishnan, S., Busnaina, A. A., and Rimai, D. S., Advances in Particle Adhesion, 191 (1994).Google Scholar
19. Busnaina, A.A., and Gale, G.W., J. Particulate Sci. and Technol. 17, (1999).Google Scholar
20. Shaw, D. J., Introduction to Colloid and Surface Chemistry, 4th ed. (Butterworth-Heinenemann Ltd., Oxford, 1992) p. 212.Google Scholar
21. Busnaina, A. A., Lin, H., Moumen, N., Feng, J. W. and Taylor, J., IEEE Transactions on Semiconductor Manufacturing, 15, 374 (2002).Google Scholar
22. Haller, K. K., Ventikos, Y., Poulikakos, D. and Monkewitz, P., J. Appl. Phys. 92, 2821 (2002).Google Scholar
23. Yun, S., Han, S., Lee, J., Hong, Y., Park, J., Yun, B., Hong, C., Cho, H. and Moon, J., The Electrochemical Society Fall Meeting, Cancun, Mexico, 2006 Google Scholar
24. Han, J. H., Hah, S. R., Kang, Y. J. and Park, J. G., J. Electrochem. Soc. 154, H255 (2007)Google Scholar
25. Lee, S. Y., Lee, S. H. and Park, J. G., J. Electrochem. Soc. 150, G327 (2003).Google Scholar
26. Hong, Y. K., Eom, D. H., Lee, S. H., Kim, T. G., Park, J. G. and Busnaina, A. A., J. Electrochem. Soc. 151, G756 (2004).Google Scholar
27. Hong, Y. K., Han, J. H., Kim, T. G., Park, J. G. and Busnaina, A. A., J. Electrochem. Soc. 154, H36 (2007).Google Scholar