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Growth of Silica Nanowires Catalysed by Pd Ion Implantation into Si(100)

Published online by Cambridge University Press:  01 February 2011

Parveen Kumar Sekhar ,
Dinesh Kumar Sood  and
Shekhar Bhansali
Parveen Kumar Sekhar
Affiliation:
Nanomaterials and Nanomanufacturing Research Center, Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620, USA
Dinesh Kumar Sood
Affiliation:
dsood@rmit.edu.au, RMIT,Australia, School of Electrical and Computer Engineering, Australia
Shekhar Bhansali
Affiliation:
bhansali@eng.usf.edu, University of South Florida, Electrical Engineering, United States
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Abstract

Selective synthesis of silica nanowires on silicon wafers catalyzed by Pd ion implantation is reported.Nanoclusters of palladium silicide acts as seeds for nucleation of wires following a Vapor-Liquid-Solid (VLS) growth model. The consumption of silicide towards nanowire growth is confirmed through Rutherford Backscattering Spectrometry (RBS).The influence of growth time, implantation dose and heating temperature on the structure and morphology of the wires is investigated. Optimization of the these tunable parameters would be needed to facilitate controlled and directed bottom-up growth of silica nanowires.Such selective synthesis may enable a large number of applications in wide areas of future technologies such as localization of light, low dimensional waveguides for functional microphotonics, scanning near field optical microscopy (SNOM), optical interconnects, sacrificial templates, optical transmission antennae and biosensors.

Keywords

nucleation & growthion-implantationcatalytic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 900: Symposium O – Nanoparticles and Nanostructures in Sensors and Catalysis , 2005 , 0900-O03-14
Copyright
Copyright © Materials Research Society 2006

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