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The Electrical Characteristics of ZnO :Ga/p-Si Junction Diode

Published online by Cambridge University Press:  21 February 2013

Tien-Chai Lin ,
Wen-Chang Huang ,
Chia-Tsung Horng  and
Shu-Hui Yang
Tien-Chai Lin
Affiliation:
Department of Electrical Engineering, Kun Shan University, No. 949, Da-Wan Road, Yong-Kang district, Tainan, 71003, Taiwan, ROC
Wen-Chang Huang*
Affiliation:
Department of Electro-Optical Engineering, Kun Shan University, No. 949, Da-Wan Road, Yong-Kang district, Tainan, 71003, Taiwan, ROC
Chia-Tsung Horng
Affiliation:
Department of Electro-Optical Engineering, Kun Shan University, No. 949, Da-Wan Road, Yong-Kang district, Tainan, 71003, Taiwan, ROC
Shu-Hui Yang
Affiliation:
Department of Electro-Optical Engineering, Kun Shan University, No. 949, Da-Wan Road, Yong-Kang district, Tainan, 71003, Taiwan, ROC
*
*Corresponding author: e-mail:wchuang@mail.ksu.edu.tw
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Abstract

The junction characteristics between ZnO:Ga (GZO) film and p-Si substrate are discussed in the research. For the transparent semiconductor ZnO, the element Ga is chosen to be the dopant source to produce a high quality n-type ZnO thin film. The ZnO:Ga (GZO) film shows a average transmittance is 84.7% (above 400 nm), a bandgap energy of 3.37 eV, a carrier concentration of 7.29×1013 cm−3and a resistivity of 118 Ω-cm. For the GZO/p-Si junction, it shows a junction barrier height of 0.54 eV with an ideality factor of 1.24. The capacitance-voltage measurement shows that it has a uniform reverse bias depletion layer. The Cheung function is also brought to discussion the diode characteristics.

Keywords

electrical propertiestransparent conductorsputtering
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 105 - 110
Copyright
Copyright © Materials Research Society 2013 

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References

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