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A Theoretical Study of Band Offset Modification at the InAs/GaAs Interface

Published online by Cambridge University Press:  21 February 2011

T-H. Shen  and
C. C. Matthai
T-H. Shen
Affiliation:
Department of Physics, UWCC, Cardiff CFl 3TH, UK.
C. C. Matthai
Affiliation:
Department of Physics, UWCC, Cardiff CFl 3TH, UK.
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Abstract

We present the results of pseudopotential calculations on the InAs/GaAs system with and without interlayers of Ge at the interface. We find that the band alignment depends critically on the positioning of the interlayer at the interface and on the number of monolayers substituted. The results can be explained with recourse to a simple model based on charge transfer between the atoms across the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 81
Copyright
Copyright © Materials Research Society 1992

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References

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