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Diffusion of Te or Zn into GaAs from Doped SiO2 Films by Rapid Thermal Processing

Published online by Cambridge University Press:  21 February 2011

A. Kitagawa ,
A. Usami ,
Y. Tokuda ,
T. Wada ,
H. Kan  and
T. Murakami
A. Kitagawa
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Y. Tokuda
Affiliation:
Aichi Institute of Technology, Dept. of Electronics, Yakusa, Toyota 470–03, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Kan
Affiliation:
Hamamatsu Photonics KK, Hamamatsu, Shizuoka 435, Japan
T. Murakami
Affiliation:
Hamamatsu Photonics KK, Hamamatsu, Shizuoka 435, Japan
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Abstract

The n+ layers on semi-insulating liquid encapsulated Czochralski GaAs and p+ layers on Si-doped n-type GaAs were formed by rapid thermal diffusion (RTD) from Te- and Zn-doped oxide films, respectively. The Zn diffusion coefficient of the RTD sample at 850°C for 6s with the heating rate of 50°C/s is about two orders of magnitude higher than that of a similar furnacediffused sample at the same temperature. In addition, Zn and Te diffusion are strongly enhanced by the high heating rate of RTD. The shallow and abrupt p+n junction in GaAs is formed by RTD of Zn with the low heating rate. This shallow p+n junction is suitable for the construction of a photodiode. It is observed that the short wavelength spectral response (<800 nm) of the photodiode fabricated by RTD from Zn-doped oxide film decreases as the heating rate of RTD increases. Deep levels in these photodiodes were characterized by deep level transient spectroscopy. A electron trap EZ (Ec -0.57eV) is produced by RTD of Zn in the n-type substrate under p+n junction. The concentration of this trap is independent of the heating rate of RTD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 65
Copyright
Copyright © Materials Research Society 1988

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References

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