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Low-K Porous Spin-On-Glass

Published online by Cambridge University Press:  10 February 2011

Paul A. Kohl
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0100
Agnes Padovani
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0100
Michael Wedlake
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0100
Dhananjay Bhusari
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0100
Sue Ann
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0100
Bidstrup Allen
Affiliation:
School of Chemical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0100
Robert Shick
Affiliation:
BFGoodrich Co., Electronic Materials Division, 9921 Brecksville Rd., Brecksville, OH 44141
Larry Rhodes
Affiliation:
BFGoodrich Co., Electronic Materials Division, 9921 Brecksville Rd., Brecksville, OH 44141
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Abstract

Previously, the fabrication of air-gap structures for electrical interconnections was demonstrated using a sacrificial polymer encapsulated in conventional dielectric materials. The air-gaps were formed by thermally decomposing the sacrificial polymer and allowing the by-products to diffuse through the encapsulating dielectric. The diffusivity of the polymer decomposition products is adequate at elevated temperatures to allow the formation of air-gaps. This process was extended to form low dielectric constant, porous silica from commercially available methylsilsesquioxane (MSQ) by the addition of the sacrificial polymer to the MSQ. The porous MSQ film was thermally cured followed by decomposition of the NB at temperatures above 400°C. The dielectric constant of the MSQ was lowered from 2.7 to 2.3 by creating 70 nm pores in the MSQ. The voids created in the MSQ appeared to exhibit a closed-pore structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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