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Study of HgTe-cdTe Multilayer Structures by Transmission Electron Microscopy

Published online by Cambridge University Press:  25 February 2011

N. Otsuka ,
Y. E. Ihm ,
K. A. Harris ,
J. W. Cook Jr  and
J. F. Schetzina
N. Otsuka
Affiliation:
School of Materials Enqineering Purdue University, W. Lafayette, IN 47907
Y. E. Ihm
Affiliation:
School of Materials Enqineering Purdue University, W. Lafayette, IN 47907
K. A. Harris
Affiliation:
Department of Physics, N. Carolina State University Raleigh, NC 27695-8202
J. W. Cook Jr
Affiliation:
Department of Physics, N. Carolina State University Raleigh, NC 27695-8202
J. F. Schetzina
Affiliation:
Department of Physics, N. Carolina State University Raleigh, NC 27695-8202
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Abstract

A transmission electron microscope study of HqTe-CdTe multilayer structures grown by molecular beam epitaxy (MBE) on (100) Cd Zn Te is presented. Both cross-sectional and plain-view observations show highly reaular structures of superlattices and tunnel structures. Dislocation densities estimated by Plan-view observations are of the order of 104 cm−2 in these multilayer structures. A quantitative characterization of interface sharpness of superlattices has been carried out by intensity analysis of satellite spots in electron diffraction patterns. It is shown that interfaces in these superlattices are hichly abrupt with a width of one or two monolayers. These observations suggest the effectiveness of the use of lattice-matched substrates to qrow high quality HgTe-CdTe multilayer structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 217
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

Faurie, J. P., Million, A., and Piaguet, J., Appl. Phys. Lett., 41, 713 (1982).CrossRefGoogle Scholar
Harris, K. A., Hwang, S., Blanks, D. K., Cook, J. W. Jr., Schetzina, J. F., Otsuka, N., Baukus, J. P., and Hunter, A. T., Appl. Phys. Lett., 48, 396 (1986).Google Scholar
3. Cheung, J. T., Niizawa, G., Moyle, J., Ong, N. P., Paine, B. M., and Vreeland, T., Jr., J. Vac. Sci. Technol., A4, 2086 (1986).CrossRefGoogle Scholar
4. Harris, K. A., Hwang, S., Blanks, D. K., Cook, J. W. Jr, Schetzina, J. F., and Otsuka, N., J. Vac. Sci. Technol., A4, 2061 (1986 ). CrossRefGoogle Scholar
5. Otsuka, N., Ihm, Y. E., Harris, K. A., Cook, J. W. Jr., and Schetzina, J. F., (to be published).Google Scholar
6. Arch, O. K., Staudenmann, J. L., and Faurie, J. P., Appl. Phys. Lett., 48, 1588 (1986).Google Scholar