Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T14:51:46.385Z Has data issue: false hasContentIssue false
  • English
  • Français

Propagation of Si-Network in Hr-Cvd and Spontaneous Chemical Deposition

Published online by Cambridge University Press:  26 February 2011

Jun-Ichi Hanna ,
Akira Kamo ,
Masanobu Azuma ,
Naoki Shibata ,
Hajime Shirai  and
Isamu Shimizu
Jun-Ichi Hanna
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory, Nagatsuta Midori-ku Yokohama, 227 Japan
Akira Kamo
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Masanobu Azuma
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Naoki Shibata
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Hajime Shirai
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Isamu Shimizu
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Get access

Abstract

In comparison with the Si:H films the conformational changes in the Si:H(F) networks of the films prepared by HRCVD and Spontaneous Chemical Deposition were investigated systematically in terms of the effects of the substrate temperature and the promoters. Fluorine participation in the chemical processes of the film growth favored the reduction of terminators without degradation of the Si network and promoted the propagation of closely packed Si network, leading to the crystal growth at a low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 79
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

l) Pankove, J. et al. ”Semiconductors and Semimetals” Vol.21, Part D.(1984) Academic Press, Inc. (London)Google Scholar
2) Steabler, D. L. and Wronski, C. R.:Appl.Phys.Lett.,31 (1977) 292 CrossRefGoogle Scholar
3) Hanna, J., Shibata, N., Fukuda, K., Ohtoshi, H., Oda, S. and Shimizu, I.: “Disordered Semiconductors” Ed.by Kastner, M. A. et al., p435 Plenum Publishing Corp.,(1987)CrossRefGoogle Scholar
4) Oda, S., Ishihara, S., Shibata, N., Shirai, H., Miyauchi, A., Fukuda, K., Tanabe, A., Ohtoshi, H., Hanna, J. and Shimizu, I.: Jpn.J.Appl.Phys., 25 (1986) L188 CrossRefGoogle Scholar
5) Shibata, N., Tanabe, A., Hanna, J., Oda, S. and Shimizu, I.:Jpn.J.Appl. Phys.,25 (1986) L540 CrossRefGoogle Scholar
6) Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I.: Jpn.J.Appl.Phys.,26 (1987) L10 CrossRefGoogle Scholar
7) Hanna, J., Oda, S., Shibata, N., Shirai, H., Miyauchi, A., Tanabe, A., Fukuda, K., Ohtoshi, H., Tokuhiro, O., Nguyen, H. and Shimizu, I.: Mat.Res.Symp.Proc., 70 (1986) 11 CrossRefGoogle Scholar
8) Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I.: Mat.Res.Symp.Proc., (1987) to be published.Google Scholar
9) Shibata, N., Miyauchi, A., Tanabe, A., Hanna, J., Oda, S. and Shimizu, I.: Jpn.J.Appl.Phys., 25 (1986) 1786 CrossRefGoogle Scholar
10) Shibata, N., Oda, S. and Shimizu, I.: Jpn.J.Appl.Phys., 26(1987) L267 Google Scholar
11) Hanna, J., Kokado, H. and Shimizu, I.: Nippon Kagaku Kaishi(1987) 2010 CrossRefGoogle Scholar
12) Matsuda, A.: Proceedings of the 10th Synposiumon ISIAT'86, Tokyo (1986) p.331 Google Scholar
13) Matsuda, A.: J.Non-cryst.Solids 59/60 (1983) 767 CrossRefGoogle Scholar
14) Tanaka, K. and Matsuda, A.: Mat.Sci.Rep. 2(1987)139 Google Scholar
15) Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J. Oda, S. and Shimizu, I.: Mat.Res.Soc.Symp.Proc.,(1987) to be publishedGoogle Scholar
16) Matsuda, A., Yamazaki, S., Nakagawa, K., Ohkushi, H., Tanaka, K., Iijima, S., Matsumura, M. and Yamamota, H.: Jpn.J.Appl.Phys., 19 (1980) L305 CrossRefGoogle Scholar
17) Nishida, S., Shiimoto, T., Yamada, A., Karasawa, S., Konagai, M. and Takahashi, K.: Appl.Phys.Lett., 49 (1986) 79 CrossRefGoogle Scholar
18) Nagamine, K., Yamada, A., Konagai, M. and Takahashi, K.: Jpn.J.Appl Phys., 26 (1987) L951 CrossRefGoogle Scholar