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Energetic Ion Beams in Semiconductor Processing: Summary of a Doe Panel Study
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- Journal:
- MRS Online Proceedings Library Archive / Volume 396 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 859
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- 1995
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Characterization of In Situ P-Type and N-Type Doped Si and GeXSi1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 268 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 223
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- 1992
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Growth and High Resolution Tem Characterization of GexSi1−x/Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 236 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 353
- Print publication:
- 1991
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Growth And High Resolution Tem Characterization of GexSi1−x/Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 235 / 1991
- Published online by Cambridge University Press:
- 28 February 2011, 811
- Print publication:
- 1991
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The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 230 / 1991
- Published online by Cambridge University Press:
- 15 February 2011, 297
- Print publication:
- 1991
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