3 results
10 - System-on-a-chip mm-wave silicon transmitters
-
- By Brian Floyd, North Carolina State University, Arun Natarajan, Oregon State University
- Edited by Hossein Hashemi, University of Southern California, Sanjay Raman, Virginia Polytechnic Institute and State University
-
- Book:
- mm-Wave Silicon Power Amplifiers and Transmitters
- Published online:
- 05 April 2016
- Print publication:
- 04 April 2016, pp 376-418
-
- Chapter
- Export citation
-
Summary
Introduction
Millimeter-wave (mm-wave) links feature large bandwidths which enable highthroughput, multi-gigabit-per-second (multi-Gb/s) wireless links. High-volume, lowcost applications for wireless communications require the transmitter to achieve a high integration level, avoiding both lossy off-chip interconnects at mm-wave frequencies and expensive packaging technologies. State-of-the-art CMOS [1] and SiGe BiCMOS [2–4] technologies achieve ft and fmax in excess of 200 GHz, making integrated mm-wave circuits feasible (see Fig. 10.1); however, the relatively high operation frequency compared with fmax makes it challenging to achieve both high transmit output power and high efficiency. Earlier chapters have discussed high-efficiency power amplifiers and efficient spatial combining and modulation schemes. This chapter will discuss systemon- a-chip (SOC) approaches to achieve highly integrated mm-wave single-element and phased-array transmitters. It is important to note that mm-wave refers to frequencies from 30 GHz to 300 GHz and the feasibility of several complex transmitter architectures must be evaluated carefully in the context of operating frequency relative to the capabilities of the process technology. The broad range of frequencies also impacts integrated circuit topologies since these frequencies represent a natural yet ill-defined transition point between the use of on-chip lumped inductor/capacitor (LC) passives and on-chip distributed transmission-line (t-line)-based components.
Multi-Gb/s wireless links at mm-wave frequencies
Wireless standards for both short-range links (primarily at 60 GHz) and longer-range point-to-point links (at 40 GHz, 60 GHz, 70–86 GHz, and 94 GHz) have focused on achieving multi-Gb/s data rates. These data rates are substantially higher than those achieved in wireless links at frequencies less than 6 GHz (IEEE 802.11n,WiMax, LTE), an increase primarily achieved by enabling channel bandwidths exceeding 2 GHz (the European standard currently calls for 250-MHz channelization at 80 GHz but allows for channel bonding). The application space for mm-wave wireless links can be broadly divided into (a) short-range wireless local-area network (LAN) links and (b) point-topoint links for high-data-rate wireless backhaul, although proposals exist for the use of mm-wave for next-generation cellular systems [5]. Figure 10.2 summarizes standards for 60-GHz wireless links and licensed E-band (71–76 and 81–86 GHz) wireless links worldwide, demonstrating the large instantaneous bandwidth and wide frequency range that is required of mm-wave transmitter ICs for communications.
Contributors
-
- By Avishek Adhikari, Susanne E. Ahmari, Anne Marie Albano, Carlos Blanco, Desiree K. Caban, Jonathan S. Comer, Jeremy D. Coplan, Ana Alicia De La Cruz, Emily R. Doherty, Bruce Dohrenwend, Amit Etkin, Brian A. Fallon, Michael B. First, Abby J. Fyer, Angela Ghesquiere, Jay A. Gingrich, Robert A. Glick, Joshua A. Gordon, Ethan E. Gorenstein, Marco A. Grados, James P. Hambrick, James Hanks, Kelli Jane K. Harding, Richard G. Heimberg, Rene Hen, Devon E. Hinton, Myron A. Hofer, Matthew J. Kaplowitz, Sharaf S. Khan, Donald F. Klein, Karestan C. Koenen, E. David Leonardo, Roberto Lewis-Fernández, Jeffrey A. Lieberman, Michael R. Liebowitz, Sarah H. Lisanby, Antonio Mantovani, John C. Markowitz, Patrick J. McGrath, Caitlin McOmish, Jeffrey M. Miller, Jan Mohlman, Elizabeth Sagurton Mulhare, Philip R. Muskin, Navin Arun Natarajan, Yuval Neria, Nicole R. Nugent, Mayumi Okuda, Mark Olfson, Laszlo A. Papp, Sapana R. Patel, Anthony Pinto, Kristin Pontoski, Jesse W. Richardson-Jones, Carolyn I. Rodriguez, Steven P. Roose, Moira A. Rynn, Franklin Schneier, M. Katherine Shear, Ranjeeb Shrestha, Helen Blair Simpson, Smit S. Sinha, Natalia Skritskaya, Jami Socha, Eun Jung Suh, Gregory M. Sullivan, Anthony J. Tranguch, Hilary B. Vidair, Tor D. Wager, Myrna M Weissman, Noelia V. Weisstaub
- Edited by Helen Blair Simpson, Columbia University, New York, Yuval Neria, Columbia University, New York, Roberto Lewis-Fernández, Columbia University, New York, Franklin Schneier, Columbia University, New York
-
- Book:
- Anxiety Disorders
- Published online:
- 10 November 2010
- Print publication:
- 26 August 2010, pp vii-xii
-
- Chapter
- Export citation
Characterization of the Silicon / Fluoride Solution Interface by In-Situ Microwave Reflectivity
- Arun Natarajan, Gerko Oskam, Douglas A. Oursler, Peter C. Searson
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 451 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 197
- Print publication:
- 1996
-
- Article
- Export citation
-
Etching of silicon in aqueous fluoride solutions can lead to almost atomically flat surfaces with a low density of surface states and recombination centers. The final quality of the surface, however, is strongly dependent on the solution composition and pH. We have performed electrochemical impedance spectroscopy in combination with potential modulated microwave reflectance spectroscopy (PMMRS) to elucidate the processes occurring at the surface during etching. PMMRS is a novel technique that only probes the free carriers in the conduction and valence bands and is, under certain conditions, not affected by processes involving electrically active surface states or charge transfer. This unique feature allows us to separate the energetics of the semiconductor from surface processes. Microwave reflectivity (δR) versus potential curves in HF solutions demonstrate the variation of the flatband potential as a function of pH. The AR response in the narrow potential region around the flatband potential and at more negative potentials is also discussed.