In this paper we report the first 4H-SiC CMOS inverter, which was designed to be integrated in the process flow of a 4H-SiC power DMOSFET. The channels of both of the n channel and p-channel MOSFETs of the inverter were 50 um wide by 3 um long. NMOSFET threshold voltage (VTH) ranged from 4.4 V at 25°C to 2.2 V at 250°C and PMOSFET VTH ranged from -4.75 V at 25°C to just under -4 V at 300°C. The transfer threshold voltage (Vm) of the 4H-SiC CMOS inverter was in a very tight range of 2.8 V to 2.9 V over the entire temperature range of 25°C to 300°C when using a drive voltage (VDD) of 10 V.