8 results
TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant Concentration
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- Journal:
- MRS Online Proceedings Library Archive / Volume 303 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 109
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- 1993
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Effect of an Interfacial Ti Layer on the Formation of CoSi2 on Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 238 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 575
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- 1991
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On the Indium Precipitation in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 139 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 135
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- 1989
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Is the End-of-Range Loops Kinetics Affected by Surface Proximity or Ion Beam Recoils Distribution?
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- Journal:
- MRS Online Proceedings Library Archive / Volume 147 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 13
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- 1989
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Formation of Shallow Boron P+ Junctions Using Sb Amorphization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 128 / 1988
- Published online by Cambridge University Press:
- 25 February 2011, 635
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- 1988
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Oxidation of Strained Si-Ge Layers Grown by MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 102 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 295
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- 1987
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Enhanced Diffusion During Rapid Thermal Annealing Of Indium And Boron In Double Implanted Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 92 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 33
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- 1987
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Effects of Indium Preamorphization on Boron Implanted Silicon Annealed by RTA
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- Journal:
- MRS Online Proceedings Library Archive / Volume 74 / 1986
- Published online by Cambridge University Press:
- 28 February 2011, 717
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- 1986
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