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Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: A nanoscale conductive-Atomic Force Microscopy C-AFM
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1108 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1108-A10-06
- Print publication:
- 2008
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- Article
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