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Contributor affiliations
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- By Frank Andrasik, Melissa R. Andrews, Ana Inés Ansaldo, Evangelos G. Antzoulatos, Lianhua Bai, Ellen Barrett, Linamara Battistella, Nicolas Bayle, Michael S. Beattie, Peter J. Beek, Serafin Beer, Heinrich Binder, Claire Bindschaedler, Sarah Blanton, Tasia Bobish, Michael L. Boninger, Joseph F. Bonner, Chadwick B. Boulay, Vanessa S. Boyce, Anna-Katharine Brem, Jacqueline C. Bresnahan, Floor E. Buma, Mary Bartlett Bunge, John H. Byrne, Jeffrey R. Capadona, Stefano F. Cappa, Diana D. Cardenas, Leeanne M. Carey, S. Thomas Carmichael, Glauco A. P. Caurin, Pablo Celnik, Kimberly M. Christian, Stephanie Clarke, Leonardo G. Cohen, Adriana B. Conforto, Rory A. Cooper, Rosemarie Cooper, Steven C. Cramer, Armin Curt, Mark D’Esposito, Matthew B. Dalva, Gavriel David, Brandon Delia, Wenbin Deng, Volker Dietz, Bruce H. Dobkin, Marco Domeniconi, Edith Durand, Tracey Vause Earland, Georg Ebersbach, Jonathan J. Evans, James W. Fawcett, Uri Feintuch, Toby A. Ferguson, Marie T. Filbin, Diasinou Fioravante, Itzhak Fischer, Agnes Floel, Herta Flor, Karim Fouad, Richard S. J. Frackowiak, Peter H. Gorman, Thomas W. Gould, Jean-Michel Gracies, Amparo Gutierrez, Kurt Haas, C.D. Hall, Hans-Peter Hartung, Zhigang He, Jordan Hecker, Susan J. Herdman, Seth Herman, Leigh R. Hochberg, Ahmet Höke, Fay B. Horak, Jared C. Horvath, Richard L. Huganir, Friedhelm C. Hummel, Beata Jarosiewicz, Frances E. Jensen, Michael Jöbges, Larry M. Jordan, Jon H. Kaas, Andres M. Kanner, Noomi Katz, Matthew S. Kayser, Annmarie Kelleher, Gerd Kempermann, Timothy E. Kennedy, Jürg Kesselring, Fary Khan, Rachel Kizony, Jeffery D. Kocsis, Boudewijn J. Kollen, Hubertus Köller, John W. Krakauer, Hermano I. Krebs, Gert Kwakkel, Bradley Lang, Catherine E. Lang, Helmar C. Lehmann, Angelo C. Lepore, Glenn S. Le Prell, Mindy F. Levin, Joel M. Levine, David A. Low, Marilyn MacKay-Lyons, Jeffrey D. Macklis, Margaret Mak, Francine Malouin, William C. Mann, Paul D. Marasco, Christopher J. Mathias, Laura McClure, Jan Mehrholz, Lorne M. Mendell, Robert H. Miller, Carol Milligan, Beth Mineo, Simon W. Moore, Jennifer Morgan, Charbel E-H. Moussa, Martin Munz, Randolph J. Nudo, Joseph J. Pancrazio, Theresa Pape, Alvaro Pascual-Leone, Kristin M. Pearson-Fuhrhop, P. Hunter Peckham, Tamara L. Pelleshi, Catherine Verrier Piersol, Thomas Platz, Marcus Pohl, Dejan B. Popović, Andrew M. Poulos, Maulik Purohit, Hui-Xin Qi, Debbie Rand, Mahendra S. Rao, Josef P. Rauschecker, Aimee Reiss, Carol L. Richards, Keith M. Robinson, Melvyn Roerdink, John C. Rosenbek, Serge Rossignol, Edward S. Ruthazer, Arash Sahraie, Krishnankutty Sathian, Marc H. Schieber, Brian J. Schmidt, Michael E. Selzer, Mijail D. Serruya, Himanshu Sharma, Michael Shifman, Jerry Silver, Thomas Sinkjær, George M. Smith, Young-Jin Son, Tim Spencer, John D. Steeves, Oswald Steward, Sheela Stuart, Austin J. Sumner, Chin Lik Tan, Robert W. Teasell, Gareth Thomas, Aiko K. Thompson, Richard F. Thompson, Wesley J. Thompson, Erika Timar, Ceri T. Trevethan, Christopher Trimby, Gary R. Turner, Mark H. Tuszynski, Erna A. van Niekerk, Ricardo Viana, Difei Wang, Anthony B. Ward, Nick S. Ward, Stephen G. Waxman, Patrice L. Weiss, Jörg Wissel, Steven L. Wolf, Jonathan R. Wolpaw, Sharon Wood-Dauphinee, Ross D. Zafonte, Binhai Zheng, Richard D. Zorowitz
- Edited by Michael Selzer, Stephanie Clarke, Leonardo Cohen, Gert Kwakkel, Robert Miller, Case Western Reserve University, Ohio
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- Book:
- Textbook of Neural Repair and Rehabilitation
- Published online:
- 05 May 2014
- Print publication:
- 24 April 2014, pp ix-xvi
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Contributor affiliations
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- By Frank Andrasik, Melissa R. Andrews, Ana Inés Ansaldo, Evangelos G. Antzoulatos, Lianhua Bai, Ellen Barrett, Linamara Battistella, Nicolas Bayle, Michael S. Beattie, Peter J. Beek, Serafin Beer, Heinrich Binder, Claire Bindschaedler, Sarah Blanton, Tasia Bobish, Michael L. Boninger, Joseph F. Bonner, Chadwick B. Boulay, Vanessa S. Boyce, Anna-Katharine Brem, Jacqueline C. Bresnahan, Floor E. Buma, Mary Bartlett Bunge, John H. Byrne, Jeffrey R. Capadona, Stefano F. Cappa, Diana D. Cardenas, Leeanne M. Carey, S. Thomas Carmichael, Glauco A. P. Caurin, Pablo Celnik, Kimberly M. Christian, Stephanie Clarke, Leonardo G. Cohen, Adriana B. Conforto, Rory A. Cooper, Rosemarie Cooper, Steven C. Cramer, Armin Curt, Mark D’Esposito, Matthew B. Dalva, Gavriel David, Brandon Delia, Wenbin Deng, Volker Dietz, Bruce H. Dobkin, Marco Domeniconi, Edith Durand, Tracey Vause Earland, Georg Ebersbach, Jonathan J. Evans, James W. Fawcett, Uri Feintuch, Toby A. Ferguson, Marie T. Filbin, Diasinou Fioravante, Itzhak Fischer, Agnes Floel, Herta Flor, Karim Fouad, Richard S. J. Frackowiak, Peter H. Gorman, Thomas W. Gould, Jean-Michel Gracies, Amparo Gutierrez, Kurt Haas, C.D. Hall, Hans-Peter Hartung, Zhigang He, Jordan Hecker, Susan J. Herdman, Seth Herman, Leigh R. Hochberg, Ahmet Höke, Fay B. Horak, Jared C. Horvath, Richard L. Huganir, Friedhelm C. Hummel, Beata Jarosiewicz, Frances E. Jensen, Michael Jöbges, Larry M. Jordan, Jon H. Kaas, Andres M. Kanner, Noomi Katz, Matthew S. Kayser, Annmarie Kelleher, Gerd Kempermann, Timothy E. Kennedy, Jürg Kesselring, Fary Khan, Rachel Kizony, Jeffery D. Kocsis, Boudewijn J. Kollen, Hubertus Köller, John W. Krakauer, Hermano I. Krebs, Gert Kwakkel, Bradley Lang, Catherine E. Lang, Helmar C. Lehmann, Angelo C. Lepore, Glenn S. Le Prell, Mindy F. Levin, Joel M. Levine, David A. Low, Marilyn MacKay-Lyons, Jeffrey D. Macklis, Margaret Mak, Francine Malouin, William C. Mann, Paul D. Marasco, Christopher J. Mathias, Laura McClure, Jan Mehrholz, Lorne M. Mendell, Robert H. Miller, Carol Milligan, Beth Mineo, Simon W. Moore, Jennifer Morgan, Charbel E-H. Moussa, Martin Munz, Randolph J. Nudo, Joseph J. Pancrazio, Theresa Pape, Alvaro Pascual-Leone, Kristin M. Pearson-Fuhrhop, P. Hunter Peckham, Tamara L. Pelleshi, Catherine Verrier Piersol, Thomas Platz, Marcus Pohl, Dejan B. Popović, Andrew M. Poulos, Maulik Purohit, Hui-Xin Qi, Debbie Rand, Mahendra S. Rao, Josef P. Rauschecker, Aimee Reiss, Carol L. Richards, Keith M. Robinson, Melvyn Roerdink, John C. Rosenbek, Serge Rossignol, Edward S. Ruthazer, Arash Sahraie, Krishnankutty Sathian, Marc H. Schieber, Brian J. Schmidt, Michael E. Selzer, Mijail D. Serruya, Himanshu Sharma, Michael Shifman, Jerry Silver, Thomas Sinkjær, George M. Smith, Young-Jin Son, Tim Spencer, John D. Steeves, Oswald Steward, Sheela Stuart, Austin J. Sumner, Chin Lik Tan, Robert W. Teasell, Gareth Thomas, Aiko K. Thompson, Richard F. Thompson, Wesley J. Thompson, Erika Timar, Ceri T. Trevethan, Christopher Trimby, Gary R. Turner, Mark H. Tuszynski, Erna A. van Niekerk, Ricardo Viana, Difei Wang, Anthony B. Ward, Nick S. Ward, Stephen G. Waxman, Patrice L. Weiss, Jörg Wissel, Steven L. Wolf, Jonathan R. Wolpaw, Sharon Wood-Dauphinee, Ross D. Zafonte, Binhai Zheng, Richard D. Zorowitz
- Edited by Michael E. Selzer, Stephanie Clarke, Leonardo G. Cohen, Gert Kwakkel, Robert H. Miller, Case Western Reserve University, Ohio
-
- Book:
- Textbook of Neural Repair and Rehabilitation
- Published online:
- 05 June 2014
- Print publication:
- 24 April 2014, pp ix-xvi
-
- Chapter
- Export citation
CdZnSe/Zn(Be)Se Quantum Dot Structures: Size, Chemical Composition and Phonons
- Y. Gu, Igor L. Kuskovsky, J. Fung, R. Robinson, I. P. Herman, G. F. Neumark, X. Zhou, S. P. Guo, M. C. Tamargo
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- Journal:
- MRS Online Proceedings Library Archive / Volume 799 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Z9.7
- Print publication:
- 2003
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The size and chemical composition of optically active CdZnSe/ZnSe and CdZnSe/Zn0.97Be0.03Se quantum dots (QDs) are determined using photoluminescence, photoluminescence excitation and polarized Raman scattering spectroscopies. We show that the addition of Be into the barrier enhances the Cd composition and the quantum size effect of optically active QDs. Additionally, surface phonons from QDs are observed in CdZnSe/ZnBeSe nanostructures.
Chemical Topography of Si Etching in a Cl2 Plasma, Studied by X-RAY Photoelectron Spectroscopy and Laser-Induced Thermal Desorption
- V. M. Donnelly, K. V. Guinn, C. C. Cheng, I. P. Herman
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 425
- Print publication:
- 1993
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This paper describes x-ray photoelectron spectroscopy (XPS) studies of etching of Si in high-density Cl2 plasmas. Polycrystalline Si films, masked with photoresist stripes, are etched and then transferred in vacuum to the XPS analysis chamber. Shadowing of photoelectrons by adjacent stripes and differential charging of the photoresist and poly-Si were used to separate contributions from the top of the mask, the side of the mask, the etched poly-Si sidewall, and the bottom of the etched trench. In pure Cl2 plasmas, surfaces are covered with about one monolayer of Cl. If oxygen is introduced into the plasma, either by addition of O2 or by erosion of the glass discharge tube, then a thin Si-oxide layer forms on the sides of both the poly-Si and the photoresist. Laser-induced thermal desorption (LITD) was used to study etching in real time. LITD of SiCI was detected by laser-induced fluorescence. These studies show that the Si-chloride layer formed during plasma etching is stable after the plasma is extinguished, so the XPS measurements are representative of the surface during etching. LITD measurements as a function of pressure and discharge power show that the etching rate is limited by the positive ion flux to the surface, and not by the supply of Cl2, at pressures above 0.5 mTorr and for ion fluxes of σ4× 1016cm−2 s−1.
Effects of Helium Ion Implantation on the Optical and Crystal Properties of GaAs
- R. C. Bowman, Jr, P. M. Adams, J. F. Knudsen, S. C. Moss, P. A. Dafesh, D. D. Smith, M. H. Herman, I. D. Ward
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- Journal:
- MRS Online Proceedings Library Archive / Volume 147 / 1989
- Published online by Cambridge University Press:
- 21 February 2011, 303
- Print publication:
- 1989
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The damage to GaAs crystals caused by helium ion implants has been monitored by changes in the Raman scattering phonon modes, double-crystal x-ray diffraction rocking curves, photoreflectance (PR), and electron beam electroreflectance (EBER) band edge transitions. As the implanted helium ion dose was increased, the various techniques revealed threshold damage behavior at very different levels. Although PR and EBER were the most sensitive to the defects created at the lowest ion doses, all techniques indicated substantial disorder for implants greater than 1014 ions/cm2.
Comparative Optical Studies of Cu, Mn, and C Impurities in Bulk Lec grown GaAs by Electron Beam Electroreflectance (EBER) and Photoluminescence (PL).
- M. H. Herman, P. J. Pearah, K. Elcess, I. D. Ward
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- Journal:
- MRS Online Proceedings Library Archive / Volume 163 / 1989
- Published online by Cambridge University Press:
- 25 February 2011, 197
- Print publication:
- 1989
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We have used 300K Electron Beam Electroreflectance (EBER) and 4. 2K photoluminescence (PL) to measure optical transitions in a series of LEC grown GaAs samples. The contaminants primarily consisted of the individual elements Cu, Mn, and C at levels above 1016/cm3. In unmodified control samples we find evidence of strong excitonic effects in the EBER lineshape even at 300K. For the contaminated samples, we find characteristic impurity transitions below the E0 bandgap of the GaAs in both optical spectroscopies. However, in general the estimated impurity binding energies by EBER are not equivalent to established PL or DLTS values. Specifically, from EBER data we find below E0 (1.424eV at 300K) a Cu peak near 49meV (1.375eV) and a C peak about 39meV (1.385eV) below E0 . An EBER spectrum of the Cu-contaminated sample at 124K shows an asymmetric Cu impurity peak 47meV below E0 . The C feature has been ascribed to either Si or Ge from corresponding PL energies by several earlier researchers. Two samples which had been implanted with Mn and annealed show a peak about 43meV below E0 (1.381eV), and what appears to be a sharp, excitonic transition 10 to 16meV above the E0 . Although these features may be due to Mn alone, the latter observation is suggestive of strain-induced valence band splitting.
The correlated appearance of impurity peaks below the split-off E0 +Δ0 band may allow their assignment to either donors or acceptors in modulated reflectance studies [1,2]. None of the present cases showed corresponding transitions below E0 +Δ0 , suggesting that the observed impurity features arise only from acceptor transitions. Alternatively, the reduction of light penetration into the GaAs above the E0 bandgap, reducing the sample interaction volume, may also explain this null observation.
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