GaN/(0001)Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {10–10} surface. The surfaces of the nanopipe walls are on {10–10} with the terminating layer between the atoms with one bond per pair. In addition, the high resolution Z-contrast image of the prismatic stacking fault confirms the results by conventional HRTEM.