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Microstructural Characterization of Al-.5Cu AND Al-1Si ON 0.6nm TCA-SiO2/Si Following Heat Treatment at 400°C in N2 - Mechanisms Providing Stability and A High Break Down Voltage for The Al-.5Cu Mos Device
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- Journal:
- MRS Online Proceedings Library Archive / Volume 382 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 449
- Print publication:
- 1995
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- Article
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