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8 - Employment outcomes of social investment in latecomer countries
- Edited by Young Jun Choi, Korea University, Timo Fleckenstein, London School of Economics and Political Science, Soohyun Christine Lee, King's College London
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- Book:
- Welfare Reform and Social Investment Policy
- Published by:
- Bristol University Press
- Published online:
- 21 December 2021
- Print publication:
- 26 February 2021, pp 189-212
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Summary
Introduction
In the mid-1990s, a new economy marked by the explosive growth of information and communications technology (ICT) is more strongly dependent on the use of knowledge than ever before across advanced capitalist democracies (OECD, 1996). As knowledge is embodied in human beings, the economy places emphasis on human capital investment which generates a highly skilled workforce, especially in the service sector. Post-industrial societies, coupled with the transition to the knowledge-based economy, have faced new social needs and demands in family life and the labour market, which are labelled ‘new’ social risks. According to Bonoli (2005) and Taylor-Gooby (2004), new social risks are generally related to three factors: (1) the problem of reconciling work and family life (mostly, care for children or frail elderly family members) as a result of the massive labour market participation of women, (2) the risk of being unemployed or paid low wages due to low/obsolete skills, (3) the risk of insufficient protection in social security schemes for workers engaged in atypical jobs like part-time and temporary work. These new social risks most seriously affect vulnerable groups such as low-skilled workers, women and young people. They are different from the ‘old’ social risks of industrialised economies – the risk of sickness, unemployment and retirement of the male breadwinner – against which protection is available in the form of unemployment insurance and pensions contingent upon fulltime employment.
In the process of economic and social transformation, advanced capitalist democracies have modernised their welfare state settlements, especially by developing social investment policies. As such, a social investment perspective is intended, on the one hand, to sustain the knowledge-based economy, where knowledge accumulation of a skilled workforce entails higher productivity and economic growth, and, on the other, to better address new social risks that people face in successive stages of their life courses (Morel et al, 2012). Above all, the idea is based on an understanding that skill development and facilitation of employment are the best responses to workers’ needs and the best prevention against the new risks. As a consequence, central to the work-oriented policy tool are active labour market policies (ALMPs) and work–family policies (WFPs). Childcare, for example, is expected to not only allow children to improve cognitive and non-cognitive abilities through high-quality early childhood interventions, but help mothers of young children to engage in paid employment.
Plasma Enhanced Atomic Layer Deposition of ZrO2 Gate Dielectric
- Jaehyoung Koo, Jiwoong Han, Sungwoo Choi, Chan Gyung Park, Yangdo Kim, Hyeongtag Jeon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 716 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, B2.1
- Print publication:
- 2002
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Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate dielectric. ZrO2 films were deposited by both atomic layer deposition (ALD) and plasma enhanced ALD (PEALD) techniques using Zr t-butoxide and Zr(NEt2)4 as Zr precursors and oxygen as reactant gas. The XTEM images showed a randomly oriented polycrystalline structure of ZrO2 and amorphous characteristics of the interfacial layer. The calculated dielectric constant value of the ZrO2 films are about 10∼18 and these low values are believed due to the low dielectric constant interface layer. ZrO2 films deposited with oxygen plasma using Zr(NEt2)4 showed the leakage current of 3.12X10-9 A/cm2 at the gate bias voltage of -1.0 Volt with the equivalent oxide thickness value of 1.39 nm. ZrO2 films deposited with the oxygen plasma showed generally improved film quality with relatively low leakage current, small hysteresis and low carbon incorporation as well as the higher growth rate compared to the films deposited with the oxygen gas. Also, ZrO2 films deposited using Zr(NEt2)4 showed relatively improved film properties compared to the films deposited using Zr t-butoxide. This study demonstrated the possible application of PEALD technique for the high quality ZrO2 gate dielectric film deposition.
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