This paper reports on the design and fabrication of GaSb/n-InxGal1−xAsySb1−y/p-AlxGal−xAsySb1−y heterojuction photodetectors operating in the 2 - 2.4 µm wavelength region. Device structures were grown by LPE and fabricated as mesa-type diodes by RIE etching in CC14/H2 plasma. For mesa passivation a surface treatment in (NH42S water solution was carried out. The photodiodes structures are characterized by differential resistance RoA=400 ωcm2. Measured detectivity is in the range 3.1010 - 2. 1011 cmHz1/2/W, in dependence on the active area and cutoff wavelength.