Single-crystal silicon layers and doping multilayers have been grown by liquid phase qpitaxy on silicon substrates. The substrates were either partially masked by SiO2, with via holes of various shapes and sizes, or patterned with SiO2 stripes, or profiled with grooves and ridges. The via holes and grooves were just refilled, or they acted as seeding areas for lateral overgrowth of the oxidized wafer up to 100μm. The silicon layers, interfaces and heterointerfaces were free of defects. With appropriate growth conditions the surfaces and interfaces of the epitaxial Si were outstandingly planar.