2 results
InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1185
- Print publication:
- 1997
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- Article
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Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl2O4 Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 61
- Print publication:
- 1995
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- Article
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