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Contributors
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- By Lenard A. Adler, Pinky Agarwal, Rehan Ahmed, Jagga Rao Alluri, Fawaz Al-Mufti, Samuel Alperin, Michael Amoashiy, Michael Andary, David J. Anschel, Padmaja Aradhya, Vandana Aspen, Esther Baldinger, Jee Bang, George D. Baquis, John J. Barry, Jason J. S. Barton, Julius Bazan, Amanda R. Bedford, Marlene Behrmann, Lourdes Bello-Espinosa, Ajay Berdia, Alan R. Berger, Mark Beyer, Don C. Bienfang, Kevin M. Biglan, Thomas M. Boes, Paul W. Brazis, Jonathan L. Brisman, Jeffrey A. Brown, Scott E. Brown, Ryan R. Byrne, Rina Caprarella, Casey A. Chamberlain, Wan-Tsu W. Chang, Grace M. Charles, Jasvinder Chawla, David Clark, Todd J. Cohen, Joe Colombo, Howard Crystal, Vladimir Dadashev, Sarita B. Dave, Jean Robert Desrouleaux, Richard L. Doty, Robert Duarte, Jeffrey S. Durmer, Christyn M. Edmundson, Eric R. Eggenberger, Steven Ender, Noam Epstein, Alberto J. Espay, Alan B. Ettinger, Niloofar (Nelly) Faghani, Amtul Farheen, Edward Firouztale, Rod Foroozan, Anne L. Foundas, David Elliot Friedman, Deborah I. Friedman, Steven J. Frucht, Oded Gerber, Tal Gilboa, Martin Gizzi, Teneille G. Gofton, Louis J. Goodrich, Malcolm H. Gottesman, Varda Gross-Tsur, Deepak Grover, David A. Gudis, John J. Halperin, Maxim D. Hammer, Andrew R. Harrison, L. Anne Hayman, Galen V. Henderson, Steven Herskovitz, Caitlin Hoffman, Laryssa A. Huryn, Andres M. Kanner, Gary P. Kaplan, Bashar Katirji, Kenneth R. Kaufman, Annie Killoran, Nina Kirz, Gad E. Klein, Danielle G. Koby, Christopher P. Kogut, W. Curt LaFrance, Patrick J.M. Lavin, Susan W. Law, James L. Levenson, Richard B. Lipton, Glenn Lopate, Daniel J. Luciano, Reema Maindiratta, Robert M. Mallery, Georgios Manousakis, Alan Mazurek, Luis J. Mejico, Dragana Micic, Ali Mokhtarzadeh, Walter J. Molofsky, Heather E. Moss, Mark L. Moster, Manpreet Multani, Siddhartha Nadkarni, George C. Newman, Rolla Nuoman, Paul A. Nyquist, Gaia Donata Oggioni, Odi Oguh, Denis Ostrovskiy, Kristina Y. Pao, Juwen Park, Anastas F. Pass, Victoria S. Pelak, Jeffrey Peterson, John Pile-Spellman, Misha L. Pless, Gregory M. Pontone, Aparna M. Prabhu, Michael T. Pulley, Philip Ragone, Prajwal Rajappa, Venkat Ramani, Sindhu Ramchandren, Ritesh A. Ramdhani, Ramses Ribot, Heidi D. Riney, Diana Rojas-Soto, Michael Ronthal, Daniel M. Rosenbaum, David B. Rosenfield, Durga Roy, Michael J. Ruckenstein, Max C. Rudansky, Eva Sahay, Friedhelm Sandbrink, Jade S. Schiffman, Angela Scicutella, Maroun T. Semaan, Robert C. Sergott, Aashit K. Shah, David M. Shaw, Amit M. Shelat, Claire A. Sheldon, Anant M. Shenoy, Yelizaveta Sher, Jessica A. Shields, Tanya Simuni, Rajpaul Singh, Eric E. Smouha, David Solomon, Mehri Songhorian, Steven A. Sparr, Egilius L. H. Spierings, Eve G. Spratt, Beth Stein, S.H. Subramony, Rosa Ana Tang, Cara Tannenbaum, Hakan Tekeli, Amanda J. Thompson, Michael J. Thorpy, Matthew J. Thurtell, Pedro J. Torrico, Ira M. Turner, Scott Uretsky, Ruth H. Walker, Deborah M. Weisbrot, Michael A. Williams, Jacques Winter, Randall J. Wright, Jay Elliot Yasen, Shicong Ye, G. Bryan Young, Huiying Yu, Ryan J. Zehnder
- Edited by Alan B. Ettinger, Albert Einstein College of Medicine, New York, Deborah M. Weisbrot, State University of New York, Stony Brook
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- Book:
- Neurologic Differential Diagnosis
- Published online:
- 05 June 2014
- Print publication:
- 17 April 2014, pp xi-xx
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Microstructural and Electrical Characterization of Barium Strontium Titanate Thin Films
- Yujing Wu, Elizabeth G. Jacobs, Russell F. Pinizzotto, Robert Tsu, Hung-Yu Liu, Scott R. Summerfelt, Bruce E. Gnade
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- Journal:
- MRS Online Proceedings Library Archive / Volume 361 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 269
- Print publication:
- 1994
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The kinetics of BST thin film grain nucleation and growth caused by rapid thermal annealing have been investigated. A series of Ba0.67Sr0.33Tii0.5O3 films were deposited on Pt electrodes using a metal-organic decomposition process. The effects of anneal time and temperature on BST grain sizes were studied by altering the processing conditions during RTA. A series of films were annealed by RTA at temperatures ranging from 550°C to 950°C for times ranging from 30 to 120 seconds. Crystallographic and microstructural characterization were done using XRD and TEM. The XRD results indicated that BST grain size increased with increasing anneal temperature, but was not affected by anneal time. Plan-view TEM indicated that BST grains were imbedded in an amorphous matrix. The average grain size was on the order of 200 Å.
Correlations of Ba1−xSrxTiO3 Materials and Dielectric Properties
- Robert Tsu, Hung-Yu Liu, Wei-Yung Hsu, Scott Summerfelt, Katsuhiro Aoki, Bruce Gnade
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- Journal:
- MRS Online Proceedings Library Archive / Volume 361 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 275
- Print publication:
- 1994
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Thin film barium strontium titanate, Ba1−xSrxTiO3 (BST), has been deposited on Pt bottom electrodes using metal-organic decomposition (MOD). Optimization of BST electric properties, including capacitance density and leakage current, can be achieved by altering the chemical and microstructural attribute of the films. Dielectric properties of BST are strongly dependent on processing temperature, film thickness, composition, and microstructure, which are closely correlated with each other. Nucleation temperatures of BST range from 580°C – 650°C depending on film thicknesses. The chemical composition giving the highest dielectric constant is explained in terms of microstructure; capacitance increases with increasing grain size for the BST films in this study. Capacitance density of 50 fF/μ m2 and leakage current density < 100 nA/cm2 at 1.6 V can be achieved by optimizing BST materials properties. In addition, leakage conduction through the Pt/BST/Pt capacitor is shown to consist of polarization current resulting from Debye relaxation and true leakage current attributed to Schottky electron emission.