10 results
Single Atom Detection Through HAADF-STEM and EELS/EDX Characterization of Fluorophore Ru(bpy)32+ for Optical DNA-Chip Applications
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- Journal:
- Microscopy and Microanalysis / Volume 21 / Issue S3 / August 2015
- Published online by Cambridge University Press:
- 23 September 2015, pp. 1429-1430
- Print publication:
- August 2015
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Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects
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- Journal:
- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 93
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- 1998
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The effect of the extra ion on residual damage in MeV implanted Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 187
- Print publication:
- 1997
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Characterization of interstitial defect clusters in ion-implanted Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 193
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- 1997
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Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 163
- Print publication:
- 1997
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Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena
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- Journal:
- MRS Online Proceedings Library Archive / Volume 439 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 71
- Print publication:
- 1996
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The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV Implanted Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 65
- Print publication:
- 1996
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Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 53
- Print publication:
- 1996
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The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV Implanted Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 439 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 83
- Print publication:
- 1996
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The Effects of Impurity Codoping on the Electrical Properties of Erbium Ions in Crystalline Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 422 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 113
- Print publication:
- 1996
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