7 results
Reward-related neural activity and structure predict future substance use in dysregulated youth
- M. A. Bertocci, G. Bebko, A. Versace, S. Iyengar, L. Bonar, E. E. Forbes, J. R. C. Almeida, S. B. Perlman, C. Schirda, M. J. Travis, M. K. Gill, V. A. Diwadkar, J. L. Sunshine, S. K. Holland, R. A. Kowatch, B. Birmaher, D. A. Axelson, T. W. Frazier, L. E. Arnold, M. A. Fristad, E. A. Youngstrom, S. M. Horwitz, R. L. Findling, M. L. Phillips
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- Journal:
- Psychological Medicine / Volume 47 / Issue 8 / June 2017
- Published online by Cambridge University Press:
- 21 December 2016, pp. 1357-1369
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Background
Identifying youth who may engage in future substance use could facilitate early identification of substance use disorder vulnerability. We aimed to identify biomarkers that predicted future substance use in psychiatrically un-well youth.
MethodLASSO regression for variable selection was used to predict substance use 24.3 months after neuroimaging assessment in 73 behaviorally and emotionally dysregulated youth aged 13.9 (s.d. = 2.0) years, 30 female, from three clinical sites in the Longitudinal Assessment of Manic Symptoms (LAMS) study. Predictor variables included neural activity during a reward task, cortical thickness, and clinical and demographic variables.
ResultsFuture substance use was associated with higher left middle prefrontal cortex activity, lower left ventral anterior insula activity, thicker caudal anterior cingulate cortex, higher depression and lower mania scores, not using antipsychotic medication, more parental stress, older age. This combination of variables explained 60.4% of the variance in future substance use, and accurately classified 83.6%.
ConclusionsThese variables explained a large proportion of the variance, were useful classifiers of future substance use, and showed the value of combining multiple domains to provide a comprehensive understanding of substance use development. This may be a step toward identifying neural measures that can identify future substance use disorder risk, and act as targets for therapeutic interventions.
Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
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- 27 April 2015, pp ix-xxx
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Contributors
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- By Blair C. Armstrong, David A. Balota, Lawrence W. Barsalou, Jos J. A. Van Berkum, Lera Boroditsky, Gregory A. Bryant, Cristina Cacciari, Joana Cholin, Morten H. Christiansen, Stella Christie, Eve V. Clark, Herbert H. Clark, Eliana Colunga, John F. Connolly, Michael J. Cortese, Seana Coulson, George S. Cree, Christopher M. Crew, Gary S. Dell, Kevin Diependaele, Judit Druks, Thomas A. Farmer, Anne Fernald, Kelly Forbes, Carol A. Fowler, Michael Frank, Stephen J. Frost, Dedre Gentner, Raymond W. Gibbs, Monica Gonzalez-Marquez, Arthur C. Graesser, Jonathan Grainger, Zenzi M. Griffin, Mary Hare, Harlan D. Harris, Marc F. Joanisse, Leonard Katz, Albert Kim, Gina R. Kuperberg, Nicole Landi, Birte Loenneker-Rodman, Danielle S. MacNamara, James S. Magnuson, Ken McRae, W. Einar Mencl, Daniel Mirman, Jennifer B. Misyak, Srini Narayanan, Kate Nation, Randy L. Newman, Lee Osterhout, Roberto Padovani, Karalyn Patterson, Kenneth R. Pugh, Terry Regier, Douglas Roland, Jay G. Rueckl, Vasile Rus, Jenny R. Saffran, Sarah D. Sahni, Arthur G. Samuel, Rebecca Sandak, Dominiek Sandra, Sophie Scott, Mark S. Seidenberg, Linda B. Smith, Michael J. Spivey, Meghan Sumner, Daniel Tranel, Gabriella Vigliocco, Nicole L. Wilson, Anna Woollams
- Edited by Michael Spivey, Ken McRae, University of Western Ontario, Marc Joanisse, University of Western Ontario
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- The Cambridge Handbook of Psycholinguistics
- Published online:
- 05 November 2012
- Print publication:
- 20 August 2012, pp xi-xiv
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The Moon and Radioactivity
- V. S. Forbes
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- Geological Magazine / Volume 66 / Issue 2 / February 1929
- Published online by Cambridge University Press:
- 01 May 2009, pp. 57-65
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In a study of the surface features of our satellite one is immediately struck by the remarkable sharpness and freshness which most of those features exhibit. Further, one is impressed by the fact that evidences of compressive action are in the minority, whereas the moon's crust shows clearly innumerable clefts, rifts, and fractures pointing to an extensional tendency of its outer envelope. This is hardly in accordance with our ideas of the appearance of a sphere which has lost all its heat; everywhere it should show signs of intense contraction, and arcuate mountain ranges should be more frequent than upon the face of the earth.
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- By Nicholas B. Allen, Joan Rosenbaum Asarnow, Jeanne Brooks-Gunn, Ronald E. Dahl, Joanne Davila, Laura M. DeRose, Lea R. Dougherty, Nancy Eisenberg, Erika E. Forbes, Wyndol Furman, Paul Gilbert, Julia A. Graber, Danielle M. Hessler, Erin C. Hunter, Chris Irons, Lynn Fainsilber Katz, Amanda Kesek, Daniel N. Klein, Annette M. La Greca, Rebecca S. Laptook, Reed W. Larson, Primrose Letcher, Peter M. Lewinsohn, Marc D. Lewis, Christine McDunn, James W. McKowen, Christopher S. Monk, Amanda Sheffield Morris, Thomas M. Olino, Tomáš Paus, Daniel S. Pine, Ann V. Sanson, John R. Seeley, Lisa B. Sheeber, Rebecca Siegel, Jennifer S. Silk, Diana Smart, Martha C. Tompson, Julie Vaughan, Brennan J. Young, Philip David Zelazo
- Edited by Nicholas B. Allen, University of Melbourne, Lisa B. Sheeber
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- Adolescent Emotional Development and the Emergence of Depressive Disorders
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- 14 September 2009
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- 20 November 2008, pp ix-xiv
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Amorphization Mechanisms in AlxGa1-xAs
- B. W. Lagow, B. A. Turkot, I. M. Robertson, L. E. Rehn, P. M. Baldo, S. D. Roh, D. V. Forbes, J. J. Coleman
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- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 199
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- 1996
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Bulk ion implantations of AlxGa1-xAs (x = 0.6 or 0.85) were performed at 77 K with 1.5 MeV Kr+, 1 MeV Ar+ or 1.5 MeV++ ions, and the resulting damage state examined by using Rutherford backscattering spectrometry-channeling at 77 K and 293 K and transmission electron microscopy at 300 K. Amorphization of a portion of the A1xGa1-x As layer occurred at 77 K only for the 1.5 MeV Kr+ implantation, although the dose required to cause amorphization was higher for the higher Al content alloy. TRIM calculations[10–11] show that with this implantation the density of high energy density cascades varies as a function of depth through the layer and that these are superimposed on a high, uniform density of defects. Comparison of the ion channeling spectra at 77 K and 293 K shows that recovery occurs over a portion of the layer in the Al0.6Ga0.4As but is not detected in the A10.85Ga0.15As layer. In both alloys, the room temperature microstructure consists of an amorphous and a crystalline region. The amorphous region extends from the deeper AlxGa1-xAs/GaAs interface into the layer, and is separated from the crystalline material by a crystalline region containing planar defects. The difference between the alloys is in the extent of this latter region, which decreases in width with increasing Al content. These results will be used to examine current models for amorphization in the AlxGa1-xAs system.
Amorphization Mechanisms in AlxGa1-xAs
- B. W. Lagow, B. A. Turkot, I. M. Robertson, L. E. Rehn, P. M. Baldo, S. D. Roh, D. V. Forbes, J. J. Coleman
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- Journal:
- MRS Online Proceedings Library Archive / Volume 439 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 197
- Print publication:
- 1996
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Bulk ion implantations of AlxGa1-xAs (x = 0.6 or 0.85) were performed at 77 K with 1.5 MeV Kr+, 1 MeV Ar+ or 1.5 MeV++ ions, and the resulting damage state examined by using Rutherford backscattering spectrometry-channeling at 77 K and 293 K and transmission electron microscopy at 300 K. Amorphization of a portion of the AlxGa1-x As layer occurred at 77 K only for the 1.5 MeV Kr+ implantation, although the dose required to cause amorphization was higher for the higher Al content alloy. TRIM calculations[10–11 ] show that with this implantation the density of high energy density cascades varies as a function of depth through the layer and that these are superimposed on a high, uniform density of defects. Comparison of the ion channeling spectra at 77 K and 293 K shows that recovery occurs over a portion of the layer in the Al0.6Ga0.4As but is not detected in the Al0.85Ga0.15As layer. In both alloys, the room temperature microstructure consists of an amorphous and a crystalline region. The amorphous region extends from the deeper AlxGa1-xAs/GaAs interface into the layer, and is separated from the crystalline material by a crystalline region containing planar defects. The difference between the alloys is in the extent of this latter region, which decreases in width with increasing Al content. These results will be used to examine current models for amorphization in the AlxGa1-xAs system.
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