4 results
Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV
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- Journal:
- MRS Online Proceedings Library Archive / Volume 811 / 2004
- Published online by Cambridge University Press:
- 28 July 2011, D4.2
- Print publication:
- 2004
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Dopant Diffusion in Silicon Substrate during Oxynitride Process
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B3.5
- Print publication:
- 2000
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A new thin film Growth/Regrowth Process Design and Experimental Comparisons with Molecular Dynamic Analyses
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- Journal:
- MRS Online Proceedings Library Archive / Volume 283 / 1992
- Published online by Cambridge University Press:
- 28 February 2011, 615
- Print publication:
- 1992
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Arsenic Diffusion and Precipitation at AsSG/Si Interface
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- Journal:
- MRS Online Proceedings Library Archive / Volume 138 / 1988
- Published online by Cambridge University Press:
- 28 February 2011, 569
- Print publication:
- 1988
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