14 results
Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images
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- Journal:
- / Volume 20 / Issue 5 / October 2014
- Published online by Cambridge University Press:
- 10 July 2014, pp. 1463-1470
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- October 2014
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Strain-free Low-defect-density Bulk GaN with Nonpolar Orientations
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I03-04
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- 2006
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Surface Morphology and Island Shape of MOVPE Grown InGaN Nano-Island Ensembles Studied by STM
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF32-05
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- 2005
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Anti-diffusion barriers for gold-based metallization to GaN
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF14-05
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- 2005
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Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF25-02
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- 2005
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Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF11-01
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- 2005
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On the dynamics of InGaN dot formation by RF-MBE growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E2.2
- Print publication:
- 2004
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Comparative Study of GaN Based Light Emitting Devices Grown on Sapphire and GaN Substrates
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.36
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- 2004
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Curvature and strain in thick HVPE-GaN for quasi-substrate applications
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y2.11
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- 2003
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TEM investigation of defect reduction and etch pit formation in GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y5.22
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- 2003
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Mg related Defect Formation during MOVPE Growth of GaN based Films studied by Transmission Electron Microscopy
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I10.5.1
- Print publication:
- 2001
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Current spreading in AlGaN:Mg cladding layers of laser structures
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.26.1
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- 2001
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Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 391-397
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- 2000
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Thermal Expansion of GaN at Low Temperatures - a Comparison of Bulk and Homo- and Heteroepitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W5.7
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- 1999
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