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The Crystal Structure of Bannisterite
- Peter J. Heaney, Jeffrey E. Post, Howard T. Evans, Jr.
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- Journal:
- Clays and Clay Minerals / Volume 40 / Issue 2 / April 1992
- Published online by Cambridge University Press:
- 28 February 2024, pp. 129-144
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The crystal structure of bannisterite, a modulated, mica-like mineral species, of general composition Ca0.5(K,Na)0.5(Mn,Fe,Mg,Zn)10(Si,Al)16O38(OH)8·nH2O, has been solved and refined for specimens from Franklin Furnace, New Jersey (FF), and Broken Hill, Australia (BH). The crystals are mono-clinic in space group A2/a, with (for FF) a = 22.265(1) Å, b = 16.368(1) Å, c = 24.668(2) Å, β = 94.285(5)°; and (for BH) a = 22.286(1) Å, b = 16.386(1) Å, c = 24.575(2) Å, β = 94.355(7)°; Z = 8. Refinement with anisotropic thermal factors reached Rw = 0.034 (FF) and 0.039 (BH). Like stilpnomelane and ganophyllite, bannisterite has a modified 2:1 trioctahedral layer structure in which some of the tetrahedra are inverted towards the interlayer region and linked to inverted tetrahedra in the opposite layer. The octahedral sheet is strongly corrugated along b. The tetrahedral sheet consists of 5-, 6-, and 7-fold rings, and bond distance calculations indicate that Al is concentrated into two of the four inverted tetrahedra. The interlayer Ca, K, and H2O species are highly disordered, as indicated by anomalously large temperature factors and partial occupancies. Localized differences in the Al/Si arrangements in the inverted tetrahedra induce disorder among the interlayer cations.
Manganese minerals in geodes from Chihuahua, Mexico1
- Robert B. Finkelman, Howard T. Evans, Jr, John J. Matzko
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- Journal:
- Mineralogical Magazine / Volume 39 / Issue 305 / March 1974
- Published online by Cambridge University Press:
- 05 July 2018, pp. 549-558
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Seven manganese minerals have been observed in geodes from Chihuahua, Mexico. Ramsdellite occurs in a number of different habits, but the morphology and precession X-ray patterns suggest that it is pseudomorphous after groutite. Pyrolusite is found only in association with rams-dellite and is believed to be an alteration product of that mineral. Todorokite generally occurs as a late-stage fibrous overgrowth in many of the geodes. Ranciéite, birnessite, hollandite, and cryptomelane are present in trace amounts. This assemblage of manganese minerals is typical of supergene mineralization.
Delindeite titanosilicates and lourenswalsite, two new from the Magnet Cove region, Arkansas
- Daniel E. Appleman, Howard T. Evans, Jr., Gordon L. Nord, Edward J. Dwornik, Charles Milton
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- Journal:
- Mineralogical Magazine / Volume 51 / Issue 361 / September 1987
- Published online by Cambridge University Press:
- 05 July 2018, pp. 417-425
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Delindeite and lourenswalsite are two new barium titanosilicate minerals found as microscopic crystals in miarolitic cavities in nepheline syenite in the Diamond Jo quarry, Hot Spring County, Arkansas. Delindeite is found as aggregates of flake-like crystallites in compact spherules, light pinkish grey in colour, with a resinous, pearly lustre. The flakes are biaxial positive with average n ∼ 1.813; the measured density is 3.3 g/cm3. Electron diffraction revealed a monoclinic unit cell in space group C2/m or subgroup, with a = 21.617(13), b = 6.816(5), c = 5.383(3) Å, β = 94.03(5)° (refined from X-ray powder data). The strongest X-ray lines are (hkl, dobs, Irel): (200, 10.80, 100); (311, 3.54, 24); (6̄01, 3.083, 28); (601, 2.888, 31); (2̄21, 2.806, 20); (910, 2.262,18). The crystals are submicroscopically twinned on (100) and also produce additional continuous diffraction streaks parallel to a*, which double the b and c axes. The formula derived from electron and ion probe analyses (H2O by difference), as constrained by density and molar volume data, is approximately (Na,K)2.7(Ba,Ca)4(Ti,Fe,Al)6Si8O26(OH)14, with Na > K, Ba ≫ Ca, Ti ≫ Fe,Al; Z = 1. Lourenswalsite occurs as very thin hexagonal plates in rosettes, silver grey to light brownish grey in colour. The crystals are biaxial negative with very low 2V angle. Indices of refraction are nα = 1.815, nβ ≈ nγ = 1.840; the measured density is 3.17 g/cm = 1.840; the measured density is 3.17 g/cm3. X-ray and electron diffraction show a sharp pseudohexagonal lattice with a = 5.244 Å, but extremely diffuse diffraction streaks normal to the hk0 plane. In these streaks a period of 20.5 Å can be discerned. A hexagonal unit cell with a = 5.244(2) Å, c = 20.49(3) Å can be refined from the powder diffraction data but does not account for some lines, probably because of extreme layer disorder as shown by precession single-crystal patterns. The strong X-ray powder lines are (002, 10.22, 20); (-, 3.93, 20); (111, 2.608, 100); (300, 1.5145, 80); (220, 1.3111, 25). The formula given by microprobe analyses, constrained by density and molar volume data, is approximately (K,Ba)2(Ti,Mg,Ca,Fe)4(Si,Al,Fe)6O14(OH)12 with K > Ba, Ti ≫ (Mg,Ca,Fe), Si > Al > Fe; Z = 1. These minerals are formed under oxidizing weathering conditions, and iron is assumed to be in the Fe3+ state.
Contributors
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- By Aakash Agarwala, Linda S. Aglio, Rae M. Allain, Paul D. Allen, Houman Amirfarzan, Yasodananda Kumar Areti, Amit Asopa, Edwin G. Avery, Patricia R. Bachiller, Angela M. Bader, Rana Badr, Sibinka Bajic, David J. Baker, Sheila R. Barnett, Rena Beckerly, Lorenzo Berra, Walter Bethune, Sascha S. Beutler, Tarun Bhalla, Edward A. Bittner, Jonathan D. Bloom, Alina V. Bodas, Lina M. Bolanos-Diaz, Ruma R. Bose, Jan Boublik, John P. Broadnax, Jason C. Brookman, Meredith R. Brooks, Roland Brusseau, Ethan O. Bryson, Linda A. Bulich, Kenji Butterfield, William R. Camann, Denise M. Chan, Theresa S. Chang, Jonathan E. Charnin, Mark Chrostowski, Fred Cobey, Adam B. Collins, Mercedes A. Concepcion, Christopher W. Connor, Bronwyn Cooper, Jeffrey B. Cooper, Martha Cordoba-Amorocho, Stephen B. Corn, Darin J. Correll, Gregory J. Crosby, Lisa J. Crossley, Deborah J. Culley, Tomas Cvrk, Michael N. D'Ambra, Michael Decker, Daniel F. Dedrick, Mark Dershwitz, Francis X. Dillon, Pradeep Dinakar, Alimorad G. Djalali, D. John Doyle, Lambertus Drop, Ian F. Dunn, Theodore E. Dushane, Sunil Eappen, Thomas Edrich, Jesse M. Ehrenfeld, Jason M. Erlich, Lucinda L. Everett, Elliott S. Farber, Khaldoun Faris, Eddy M. Feliz, Massimo Ferrigno, Richard S. Field, Michael G. Fitzsimons, Hugh L. Flanagan Jr., Vladimir Formanek, Amanda A. Fox, John A. Fox, Gyorgy Frendl, Tanja S. Frey, Samuel M. Galvagno Jr., Edward R. Garcia, Jonathan D. Gates, Cosmin Gauran, Brian J. Gelfand, Simon Gelman, Alexander C. Gerhart, Peter Gerner, Omid Ghalambor, Christopher J. Gilligan, Christian D. Gonzalez, Noah E. Gordon, William B. Gormley, Thomas J. Graetz, Wendy L. Gross, Amit Gupta, James P. Hardy, Seetharaman Hariharan, Miriam Harnett, Philip M. Hartigan, Joaquim M. Havens, Bishr Haydar, Stephen O. Heard, James L. Helstrom, David L. Hepner, McCallum R. Hoyt, Robert N. Jamison, Karinne Jervis, Stephanie B. Jones, Swaminathan Karthik, Richard M. Kaufman, Shubjeet Kaur, Lee A. Kearse Jr., John C. Keel, Scott D. Kelley, Albert H. Kim, Amy L. Kim, Grace Y. Kim, Robert J. Klickovich, Robert M. Knapp, Bhavani S. Kodali, Rahul Koka, Alina Lazar, Laura H. Leduc, Stanley Leeson, Lisa R. Leffert, Scott A. LeGrand, Patricio Leyton, J. Lance Lichtor, John Lin, Alvaro A. Macias, Karan Madan, Sohail K. Mahboobi, Devi Mahendran, Christine Mai, Sayeed Malek, S. Rao Mallampati, Thomas J. Mancuso, Ramon Martin, Matthew C. Martinez, J. A. Jeevendra Martyn, Kai Matthes, Tommaso Mauri, Mary Ellen McCann, Shannon S. McKenna, Dennis J. McNicholl, Abdel-Kader Mehio, Thor C. Milland, Tonya L. K. Miller, John D. Mitchell, K. Annette Mizuguchi, Naila Moghul, David R. Moss, Ross J. Musumeci, Naveen Nathan, Ju-Mei Ng, Liem C. Nguyen, Ervant Nishanian, Martina Nowak, Ala Nozari, Michael Nurok, Arti Ori, Rafael A. Ortega, Amy J. Ortman, David Oxman, Arvind Palanisamy, Carlo Pancaro, Lisbeth Lopez Pappas, Benjamin Parish, Samuel Park, Deborah S. Pederson, Beverly K. Philip, James H. Philip, Silvia Pivi, Stephen D. Pratt, Douglas E. Raines, Stephen L. Ratcliff, James P. Rathmell, J. Taylor Reed, Elizabeth M. Rickerson, Selwyn O. Rogers Jr., Thomas M. Romanelli, William H. Rosenblatt, Carl E. Rosow, Edgar L. Ross, J. Victor Ryckman, Mônica M. Sá Rêgo, Nicholas Sadovnikoff, Warren S. Sandberg, Annette Y. Schure, B. Scott Segal, Navil F. Sethna, Swapneel K. Shah, Shaheen F. Shaikh, Fred E. Shapiro, Torin D. Shear, Prem S. Shekar, Stanton K. Shernan, Naomi Shimizu, Douglas C. Shook, Kamal K. Sikka, Pankaj K. Sikka, David A. Silver, Jeffrey H. Silverstein, Emily A. Singer, Ken Solt, Spiro G. Spanakis, Wolfgang Steudel, Matthias Stopfkuchen-Evans, Michael P. Storey, Gary R. Strichartz, Balachundhar Subramaniam, Wariya Sukhupragarn, John Summers, Shine Sun, Eswar Sundar, Sugantha Sundar, Neelakantan Sunder, Faraz Syed, Usha B. Tedrow, Nelson L. Thaemert, George P. Topulos, Lawrence C. Tsen, Richard D. Urman, Charles A. Vacanti, Francis X. Vacanti, Joshua C. Vacanti, Assia Valovska, Ivan T. Valovski, Mary Ann Vann, Susan Vassallo, Anasuya Vasudevan, Kamen V. Vlassakov, Gian Paolo Volpato, Essi M. Vulli, J. Matthias Walz, Jingping Wang, James F. Watkins, Maxwell Weinmann, Sharon L. Wetherall, Mallory Williams, Sarah H. Wiser, Zhiling Xiong, Warren M. Zapol, Jie Zhou
- Edited by Charles Vacanti, Scott Segal, Pankaj Sikka, Richard Urman
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- Book:
- Essential Clinical Anesthesia
- Published online:
- 05 January 2012
- Print publication:
- 11 July 2011, pp xv-xxviii
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Voltage Shifts and Defect-Dipoles in Ferroelectric Capacitors
- W. L. Warren, G. E. Pike, D. Dimos, K. Vanheusden, H.N. Al-Shareef, B. A. Tuttle, R. Ramesh, J. T. Evans, Jr.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 433 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 257
- Print publication:
- 1996
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We review the processes and mechanisms by which voltage offsets occur in the hysteresis loop of ferroelectric materials. Simply stated, voltage shifts arise from nearinterfacial charge trapping in the ferroelectric. We show that the impetus behind voltage shifts in ferroelectric capacitors is the net polarization, with the net polarization being determined by the perovskite and the aligned defect-dipole components. Some common defect-dipoles in the PZT system are lead vacancy-oxygen vacancy complexes. One way to change the net polarization in the ferroelectric is to subject the PZT capacitor to a dc bias at elevated temperature; this process is spectroscopically shown to align defect-dipoles along the direction of the applied electric field. The alignment of defect-dipoles can strongly impact several material properties. One such impact is that it can lead to enhanced voltage shifts (imprint). It is proposed that the net polarization determines the spatial location of the asymmetrically trapped charge that are the cause for the voltage shifts. An enhanced polarization at one electrode interface can lead to larger voltage shifts since it lowers the electrostatic potential well for electron trapping, i.e., more electron trapping can occur. Defect-dipole alignment is also shown to increase the UV sensitivity of the ferroelectric.
Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN
- J. T. Trexler, S. J. Pearton, P. H. Holloway, M. G. Mier, K. R. Evans, R. F. Karlicek, Jr.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 1091
- Print publication:
- 1996
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Reactions between electron beam evaporated thin films of Ni/Au, Pd/Au, and Cr/Au on p-GaN with a carrier concentration of 9.8 × 1016 cm−3 were investigated in terms of their structural and electronic properties both as-deposited and following heat treatments up to 600°C (furnace anneals) and 900°C (RTA) in a flowing N2 ambient. Auger electron spectroscopy (AES) depth profiles were used to study the interfacial reactions between the contact metals and the p-GaN. The electrical properties were studied using room temperature current-voltage (1-V) measurements and the predominant conduction mechanisms in each contact scheme were determined from temperature dependent I-V measurements. The metallization schemes consisted of a 500 Å interfacial layer of Ni, Pd, or Cr followed by a 1000 Å capping layer of Au. All schemes were shown to be rectifying as-deposited with increased ohmic character upon heat treatment. The Cr/Au contacts became ohmic upon heating to 900°C for 15 seconds while the other schemes remained rectifying with lower breakdown voltages following heat treatment. The specific contact resistance of the Cr/Au contact was measured to be 4.3×10−1 Ωcm2. Both Ni and Cr have been shown to react with the underlying GaN above 400 °C while no evidence of a Pd:GaN reaction was seen. Pd forms a solid solution with the Au capping layer while both Ni and Cr tend to diffuse through the capping layer to the surface. All contacts were shown to have a combination of thermionic emission and thermionic field emission as their dominant conduction mechanism, depending on the magnitude of the applied reverse bias.
Microstructural Evolution of Pb(Zr,Ti)O3 Ceramics Using Electron Paramagnetic Resonance
- W. L. Warren, B. A. Tuttle, R. W. Schwartz, W. F. Hammetter, D. C. Goodnow, J. T. Evans, Jr., J. A. Bullington
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- Journal:
- MRS Online Proceedings Library Archive / Volume 310 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 3
- Print publication:
- 1993
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Using electron paramagnetic resonance (EPR) we have followed the microstructural evolution with temperature of lead zirconate titanate (PZT) ceramics from the amorphous to the perovskite phase. A number of paramagnetic point defects were identified (Carbon, Pb+3, and Ti+3) while traversing the evolution of these ceramics during various heat treatments both before and after optical illumination. Perhaps the most important finding is that the Pb+3 and Ti+3 centers can only be optically created in the perovskite materials, thereby, showing that they are not associated with the amorphous or the pyrochlore phases. It is also found that EPR signals attributed to carbon radicals are present in fairly high concentrations (4 × 1017/cm3) if the solution chemistry derived PZT materials are annealed in an oxygen deficient ambient (0.1% O2) at 650°C.