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The ex situ lift out (EXLO) adhesion forces are reviewed and new applications of EXLO for focused ion beam (FIB)-prepared specimens are described. EXLO is used to manipulate electron transparent specimens on microelectromechanical systems carrier devices designed for in situ electron microscope analysis. A new patented grid design without a support film is described for EXLO. This new slotted grid design provides a surface for holding the specimen in place and also allows for post lift out processing. Specimens may be easily manipulated into a backside orientation to reduce FIB curtaining artifacts with this slotted grid. Large EXLO specimens can be manipulated from Xe+ plasma FIB prepared specimens. Finally, applications of EXLO and manipulation of FIB specimens using a vacuum probe lift out method are shown. The vacuum probe provides more control for placing specimens on the new slotted grids and also allows for easy manipulation into a backside configuration.
Most current micro/nanoelectromechanical systems (MEMS/NEMS) are based on silicon. However, silicon exhibits relatively poor mechanical/tribological properties, compromising applications to some devices. Diamond films with superior mechanical/tribological properties provide an excellent alternative platform material. Ultrananocrystalline diamond (UNCD®) in film form with 2-5 nm grains exhibits excellent mechanical and tribological properties for high-performance MEMS/NEMS devices. Concurrently, piezoelectric Pb(ZrxTi1-x)O3 (PZT) films provide high sensitivity/low electrical noise for sensing/high-force actuation at relatively low voltages. Therefore, integration of PZT and UNCD films provides a high-performance platform for advanced MEMS/NEMS devices. This paper describes the bases of such integration and demonstration of low voltage piezoactuated hybrid PZT/UNCD cantilevers.
In situ transmission electron microscopy (150 kV) has been employed to study the evolution of dislocation microstructures during relatively rapid thermal cycling of a 200 nm Al thin film on Si substrate. After a few thermal cycles between 150 and 500°C, nearly stable Al columnar grain structure is established with average grain less than a μm. On rapid cooling (3–30+ °C/s) from 500°C, dislocations first appear at a nominal temperature of 360–380°C, quickly multiplying and forming planar glide plane arrays on further cooling. From a large number of such experiments we have attempted to deduce the dislocation evolution during thermal cycling in these polycrystalline Al films and to account qualitatively for the results on a simple dislocation model.
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