19 results
Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE
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- MRS Online Proceedings Library Archive / Volume 1202 / 2009
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- 31 January 2011, 1202-I05-12
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- 2009
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Growth of High Quality c-plane AlN on a-plane Sapphire
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- MRS Online Proceedings Library Archive / Volume 1202 / 2009
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- 31 January 2011, 1202-I05-02
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- 2009
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Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E3.12
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- 2004
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Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E3.11
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- 2004
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Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
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- 01 February 2011, Y6.6
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- 2003
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Characterization of high-quality epitaxial AlN films grown by MOVPE
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
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- 21 March 2011, I9.3.1
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- 2001
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New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
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- 21 March 2011, I3.48.1
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- 2001
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Effect of Ge in Cl2 Plasma for Reactive Ion Etching of GaN
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
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- 21 March 2011, I11.29.1
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- 2001
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Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
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- 21 March 2011, I11.44.1
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- 2001
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Review of Facet Controlled Epitaxial Lateral Overgrowth (FACELO) of GaN via Low Pressure Vapor Phase Epitaxy
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G8.4
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- 2000
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TEM Analysis of Threading Dislocations in ELO-GaN Grown with Controlled Facet Planes
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G11.59
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- 2000
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Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 62-68
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- 2000
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Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN VIA Metalorganic Vapor-Phase Epitaxy (Movpe)
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 118-123
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- 1999
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Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 441-446
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- 1999
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Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W2.3
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- 1999
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Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
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- 15 February 2011, G4.1
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- 1998
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Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE)
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G3.1
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- 1998
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The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 89
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- 1996
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Facets Formation Mechanism of GaN Hexagonal Pyramids on Dot-Patterns via Selective MOVPE
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 267
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- 1995
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