The present study deals with the investigation of electrically active damage induced by direct
and through protecting oxide layer implantation of 11B+ ions. The residual defects have been
determined by means of Deep Level Transient Spectroscopy (DLTS). It has been found that the
number of defects is practically reduced to one centre when the implantation is performed through
an oxide layer. The defect spectrum evolution, under the effect of the implant mass and the RTA
treatments, has been also investigated. The defect generation kinetics, under annealing treatments,
is found strongly depending on 11B+ ionic number reaching the substrate.