In this paper, we report the experimental data of photoresponse namely;
voltage responsivity and speed of response at λ = 904 nm of silicon
photodiode formed by pulsed laser-induced diffusion technique. Experimental
results demonstrated that the photodiode parameters strongly depend on the
laser energy and substrate temperature. Maximum Responsivity obtained for
p-n junctions photodetectors prepared by laser fluence of 9.17 J/cm2 for Al-doped Si and 10.03 J/cm2 for Sb-doped Si at substrate
temperature (Ts) of 598 K. The pulse response waveform of photodetectors
illustrated that the rise time is not dominated by RC. Non-linearity
deviation coefficient was improved by factors 1.6 for and 2.7 for for
Al-doped Si and Sb-doped Si photodetectors respectively when Ts is
raised from 300 K to 598 K.