This paper characterizes novel “star” defects in GaN films grown with metal–organic vapor phase deposition (MOVPE) on GaN substrates with electron channeling contrast imaging (ECCI) and high-resolution electron backscatter diffraction (HREBSD). These defects are hundreds of microns in size and tend to aggregate threading dislocations at their centers. They are the intersection of six nearly ideal low-angle tilt boundaries composed of $\langle a\rangle$-type pyramidal edge dislocations, each on a unique slip system.

Digital image correlation (DIC) in a scanning electron microscope and high-angular resolution electron backscatter diffraction (HREBSD) provide valuable and complementary data concerning local deformation at the microscale. However, standard surface preparation techniques are mutually exclusive, which makes combining these techniques in situ impossible. This paper introduces a new method of applying surface patterning for DIC, namely a urethane microstamp, that provides a pattern with enough contrast for DIC at low accelerating voltages, but is virtually transparent at the higher voltages necessary for HREBSD and conventional EBSD analysis. Furthermore, microstamping is inexpensive and repeatable, and is more suitable to the analysis of patterns from complex surface geometries and larger surface areas than other patterning techniques.