14 results
New materials for post-Si computing: Ge and GeSn devices
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- Journal:
- MRS Bulletin / Volume 39 / Issue 8 / August 2014
- Published online by Cambridge University Press:
- 14 August 2014, pp. 678-686
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- August 2014
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Contributors
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- Book:
- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1072 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1072-G02-08
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- 2008
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Epitaxial Growth of Single Crystalline Ge Films on GaAs Substrates for CMOS Device Integration
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C07-02
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- 2008
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Strain-Transfer Structure Beneath the Transistor Channel for Increasing the Strain Effects of Lattice-Mismatched Source and Drain Stressors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G01-03
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- 2007
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Sub-30 nm FinFETs with Schottky-Barrier Source/Drain Featuring Complementary Metal Silicides and Fully-Silicided Gate for P-FinFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G05-17
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- 2007
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Sub 50nm Strained n-FETs Formed on Silicon-Germanium-on-Insulator Substrates and the Integration of Silicon Source/Drain Stressors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G03-04
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- 2007
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Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35Ge0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 994 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0994-F09-03
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- 2007
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Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G05-07
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- 2007
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Process-Induced Strained P-MOSFET Featuring Nickel-Platinum Silicided Source/Drain
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- Journal:
- MRS Online Proceedings Library Archive / Volume 913 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0913-D02-04
- Print publication:
- 2006
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Chemical Vapor Deposition of Germanium Nanocrystals on Hafnium Oxide for Non-Volatile Memory Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 830 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, D6.3
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- 2004
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Strained Channel Transistor Using Strain Field Induced By Source and Drain Stressors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 809 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, B10.4
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- 2004
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Molybdenum Gate Electrode Technology For Deep Sub-Micron CMOS Generations
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- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K5.2
- Print publication:
- 2001
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Molybdenum as a Gate Electrode for Deep Sub-Micron CMOS Technology
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- Journal:
- MRS Online Proceedings Library Archive / Volume 611 / 2000
- Published online by Cambridge University Press:
- 14 March 2011, C3.2.1
- Print publication:
- 2000
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