Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-06-08T09:36:26.789Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoinduced Amorphous ↔ Crystalline Transitions In Sbx Sc1−x Films

Published online by Cambridge University Press:  15 February 2011

Paul Stradins ,
Ojars Balors  and
Vyatcheslav Gerbreder
Paul Stradins
Affiliation:
Physics Institute, Salaspils, Latvia
Ojars Balors
Affiliation:
Department of Physics, Daugavpils Pedagogical Institute, Daugavpils, Latvia
Vyatcheslav Gerbreder
Affiliation:
Department of Physics, Daugavpils Pedagogical Institute, Daugavpils, Latvia
Get access

Abstract

We present a study of laser pulse induced crystallization and amorphization in SbxSc1−x films. The time required to reach stable amorphous state after the pulse increases with exciting pulse length and becomes constant when stationary temperature field is approached by the end of the pulse. The time dependence of the excited spot's local temperature is deduced directly from amorphization threshold intensity dependence on the pulse length and is used to calculate the cooling times after the amorphizing pulse. Two photocrystallization regimes are distinguished depending on whether the melting starts before or after the end of crystallization, the condition depending on crystallization tendency for given composition x. The occurrence of melting limits the maximum optical contrast during photocrystallization. The results show that the crystallization tendency of SbxSei-x rises with x and has a local maximum between x = 0.5 and x = 0.7.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 429
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ovshinsky, S. R., J. of Non-Cryst. Sol. 141, 200 (1992)Google Scholar
2. Fuxi, G., Songsheng, X., Ann. Phys. 1, 391 (1992)Google Scholar
3. Barton, R., Davis, Ch.R., Rubin, K., Lim, G., Appl. Phys. Lett. 48, 1255 (1986)Google Scholar
4. Shvarts, K.K., Stradins, P.J., Radiation Effects and Defects in Solids 119 (P2), 881 (1991)Google Scholar
5. Nakayoshi, Y., Kanemitsu, Y., Masumoto, Y., Maeda, Y., Jpn. J. Appl. Phys. 31 (P1,2B), 471 (1992)Google Scholar
6. Sous, J., Ortiz, C., Alfonso, C.N., Catalina, F., Appl. Phys. A 54, 279 (1992)Google Scholar
7. Rubin, K., Birnie, D.P. III, Chen, M., J. Appl. Phys. 71 (8), 3680 (1992)Google Scholar
8. Bakers, O., Stradins, P., Gebreder, V., Latvian J. of Phys. Sci. 1, 11 (1992)Google Scholar
9. Carslaw, H. S., Jaeger, J. C., Conduction of Heat in Solids, 2nd ed. (Oxford University Press 1959),Ch. X.Google Scholar