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Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures

Published online by Cambridge University Press:  15 February 2011

A. K. Agarwal ,
R. R. Siergiej ,
S. Seshadri ,
M. H. White ,
P. G. McMullin ,
A. A. Burk ,
L. B. Rowland ,
C. D. Brandt  and
R. H. Hopkins
A. K. Agarwal
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
R. R. Siergiej
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
S. Seshadri
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
M. H. White
Affiliation:
Lehigh University, Sherman Fairchild Center, Bethlehem, PA 18015, agarwal@mmwcad.pgh.wec.com
P. G. McMullin
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
A. A. Burk
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
L. B. Rowland
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
C. D. Brandt
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
R. H. Hopkins
Affiliation:
Northrop Grumman Science & Technology Center, 1310 Beulah Road, Pittsburgh, PA 15235, (412) 256-2037, (412) 256-1877
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Abstract

The long-term reliability of gate insulator under high field stress of either polarity presents a constraint on the highest electric field that can be tolerated in a 4H-SiC UMOSFET under on or off condition. A realistic performance projection of 41H-SiC UMOSFET structures based on electric field in the gate insulator (1.5 MV/cm under on-condition and 3 MV/cm under offcondition) consistent with long-term reliability of insulator is provided for the breakdown voltage in the range of 600 to 1500 V. The use of P+ polysilicon gate allows us to use a higher field of 3 MV/cm in the insulator under off-condition and leads to a higher breakdown voltage as the Fowler Nordheim (FN) injection from the gate electrode is reduced. FN injection data is presented for p type 4H-SiC MOS capacitor under inversion at room temperature and at 325°C. It is concluded that the insulator reliability, and not the SiC, is the limiting factor and therefore the high temperature operation of these devices may not be practical.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 87
Copyright
Copyright © Materials Research Society 1996

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References

1. Bhatnagar, M. and Baliga, B. J., ”Comparison of 6H-SiC, 3C-SiC and Si power devices,” IEEE Trans. on Electron Devices, 40, pp. 645–655, 1993.Google Scholar
2. Palmour, J. W. and Lipkin, L. A., “High temperature power devices in silicon carbide,” Trans. Second International High Temperature Electronics Conference, p. XI-3, June 1994.Google Scholar
3. Tokura, N., Hara, K., Miyajima, T., Fuma, H. and Hara, K., ”Current-Voltage and capacitance-voltage characteristics of metal/oxide/6H-silicon carbide structure,” Jpn. J. Appl. Phys., 34, pp. 5567–5573, 1995.Google Scholar
4. Afanas ev, V. V., Bassler, M., Pensl, G., Stein von Kamienski, E. and Schulz, M. J., “Band offsets and electronic structure of SiC/SiO2 interfaces,” unpublished.Google Scholar
5. Goodman, Dr. Alvin M., private communication.Google Scholar
6. Prof. Chow, T. Paul, private communication.Google Scholar
7. Afanas ev, , Bassler, M., Pensl, G. and Schulz, M. J., “Energy distribution of electron states at SiC/Si0 2 interfaces,” IEEE Semiconductor Interface Specialist Conference, Dec. 1995.Google Scholar
8. Lipkin, L. A. and Palmour, J. W., “Improved oxidation procedures for reduced SiO2/SiC defects,” IEEE Semiconductor Interface Specialist Conference, Dec. 1995.Google Scholar