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The Diffusivity-Mobilitt Ratio Under Strong Magnetic Field in III-V Superlattices with Graded Structures

Published online by Cambridge University Press:  22 February 2011

Kamakhya P. Ghatak  and
Badal De
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Tele-communication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta - 700032, India
Badal De
Affiliation:
Azalea Street, Paramus, NJ 07652, U.S.A
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Abstract

In this paper we have studied the Einstein relation for the diffusivity-mobility ratio in III-V superlattices with graded structures under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb an example that the diffusivity mobility ratio increases in an oscillatory way with increasing carrier degeneracy as a consequence4SdH effect. The Einstein relation in IIIV superlattice is greater than that of the same for the constituent materials. Besides the theoretical results are in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 513
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Eitra, B. and Ghatak, K.P., Phys. Stat. Sol.(b) 164, 13 (1991) and the references cited therein.Google Scholar
2. Emch, G.G., J. Math. Phys. 14, 1775, (1973).Google Scholar
3. Kubo, R., J. Phys. Soc. Japan 12, 537 (1957).Google Scholar
4. Nag, B.R., Electron Transport in Compound Semiconductors (Springer-Verlag, Germany, 1980).Google Scholar
5. Mondal, M., Banik, S.N. and Ghatak, K.P., Canad, J. Phys. 67, 72 (1989).Google Scholar
6. Mondal, M. and GHatak, K.P., Ann. Der. Physik 46, 502 (1989); K.P. Ghatak and M. Mondal, Thin Solid Films 148, 219 (1987).Google Scholar
7. Ghatak, K.P. and Mitra, B., Int. J. Electronics, 72, 541 (1992).Google Scholar
8. Tsidilkovskii, I.M., Band Structure of Semiconductors (Pergamon Press, Oxford, 1982).Google Scholar
9. Brant, A.L., J. Exp. Theo. Phys. 119, 778 (1992).Google Scholar
10. Ghatak, K.P., Influence of band structures on some quantum processes in tetragonal semiconductors, D. Engg. Thesis, Jadavpur University, 1991, India.Google Scholar