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Effect of as Overpressure on Mn-Induced Layer Disordering in AlGaAs-GaAs Superlattices: An Investigation of the Mn Diffusion Mechanism

Published online by Cambridge University Press:  25 February 2011

C. H. Wu ,
J. I. Maun  and
K. C. Hseh
C. H. Wu
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
J. I. Maun
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
K. C. Hseh
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

Data are presented showing the effect of As overpressure on the diffusion of Mn into an AlGaAs-GaAs superlattice (SL) using MnAs as the diffusion source. Arsenic overpressure has been shown to play a significant role in both impurity-induced layer disordering (IILD) and the microstructure of the Mn-diffused samples. The degree to which layer disordering occurs decreases as As overpressure increases. Furthermore, dislocation loops are observed for the diffusion of Mn under Ga-rich conditions at prolonged diffusion times. Both results, in addition to the effect of As overpressure on the Mn diffusion profile, indicate that Mn diffusion into GaAs or GaAs-AlGaAs heterostructures takes place by an interstitial-substitutional mechanism involving column III vacancies under As-rich conditions and a “kick-out” mechanism involving column III interstitials under Ga-rich conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 73
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Longini, R.L., Solid State Electron. 5, 127 (1962).Google Scholar
2. Gösele, U. and Morehead, F., J. Appl. Phys. 52, 4617 (1981).Google Scholar
3. Jordon, A.S. and Nikolakopoulou, G.A., J. Appl. Phys. 55, 4194 (1984).Google Scholar
4. Wu, C.H., Hsieh, K.C., Hofler, G., El-Zein, N., and Holonyak, N. Jr, Appl. Phys. Lett. 59, 1224 (1991).Google Scholar
5. Hsieh, K. C., Wu, C. H., Hofler, G., El-Zein, N., and Holonyak, N. Jr, in Proceedings of International Symposium on GaAs and Related Compounds. Seattle. 1991. edited by Stringfellow, G.B. (Institute of Physics, New York, 1992), p. 219.Google Scholar
6. Harrison, I., Ho, H. P., Tuck, B., Henini, M., and Hughes, O. H., Semicond. Sci. Technol. 5, 561 (1990).Google Scholar
7. Hsieh, K. Y., Hwang, Y. L., Lee, J. H. and Kalbas, R. M., Electron, J.. Mater. 19, 1417 (1990).Google Scholar
8. Deppe, D.G. and Holonyak, N. Jr, J. Appl. Phys. 64, R93 (1988).Google Scholar
9. Black, J.E. and Jungbluth, E.D., J. Electrochem. Soc. 114, 181 (1967).Google Scholar
10. Ball, R.K., Hutchinson, P.W. and Dobson, P.S., Phil. Mag. 43, 1299 (1981).Google Scholar