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Comparison of the Optical Cross Section for the Si Dangling Bond in a- Si:H and At the c - Si/SiO2 Interface

Published online by Cambridge University Press:  28 February 2011

W. B. Jackson  and
N. M. Johnson
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The optical properties of the trivalent silicon dangling bond defect in hydrogenated amorphous silicon and at the Si/SiO2 interface are compared. While both defects give rise to ambipolar deep levels within the gap, significant differences in the optical properties between the two systems are found. The absorption in a-Si:H is significantly stronger and is dominated by a transition from the defect to the conduction band while the absorption at the interface is dominated by hole emission. The average dipole matrix element squared is roughly independent of energy in both systems with a magnitude of ∼30Å2. Implications of these results for optical measurements in other silicon systems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 545
Copyright
Copyright © Materials Research Society 1985

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References

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