Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-27T06:59:05.322Z Has data issue: false hasContentIssue false
  • English
  • Français

A Novel Single Step Lapping and Chemo-Mechanical Polishing Scheme for Antimonide Based Semiconductors Using 1 µm Agglomerate-Free Alumina Slurry

Published online by Cambridge University Press:  14 March 2011

P.S. Dutta ,
R.J. Gutmann ,
D. Keller  and
L. Sweet
P.S. Dutta
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
R.J. Gutmann
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
D. Keller
Affiliation:
Universal Photonics Inc., Hicksville, NY, USA
L. Sweet
Affiliation:
Baikowski International Corp., Charlotte, NC, USA
Get access

Abstract

A novel approach for a single step lapping and chemical-mechanical polishing of antimonide-based III-V compounds using agglomerate-free alumina slurries is presented. Relatively high removal rates, minimal scratching, and low surface roughness have been obtained. The effects of slurry preparation cycle on the slurry properties and chemomechanical polishing results are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E4.1.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Steigerwald, J.E., Murarka, S.P. and Gutmann, R.J., “Chemical-Mechanical Planarization of Microelectronic Materials,” J. Wiley (1997)10.1002/9783527617746Google Scholar
2. Li, S.H. and Miller, R.O., “Chemical Mechanical Polishing in Silicon Processing”, Semiconductors and Semimetals Series, Vol 63, Academic Press (2000)Google Scholar
3. Dutta, P.S. and Miller, T.R., Patent Application Filed by Rensselaer Polytechnic Institute, Troy, NY (October 1999)Google Scholar
4. Dutta, P.S. and Miller, T.R., J. Electronic Materials (in press)Google Scholar
5. Dutta, P.S., Miller, T.R., Charache, G.W. and Gutmann, R.J., J. Crystal Growth (in press)Google Scholar
6. Bachmann, K.J., Thiel, F.A. and Schreiber, H. Jr., Progress in Crystal Growth and Characterization 2, 171 (1979)10.1016/0146-3535(81)90030-7Google Scholar
7. Dutta, P.S., Ostrogorsky, A.G. and Gutmann, R.J., in: Proc. NREL Conf. On Thermophotovoltaic Generation of Electricity, Denver, CO, Ed. Coutts, T.J., Benner, J.P., Allman, C.S., AIP Conf. Proc. Vol. 460, New York, (1998) p. 227 Google Scholar
8. Dutta, P.S. and Gutmann, R.J., Proc. of the Fifth International Conference on CMP-MIC, Santa Clara, CA (2000) p. 441 Google Scholar
9. Li, S.H., Tredinnick, B. and Hoffmann, M., in Chapter 5 “Chemical Mechanical Polishing in Silicon Processing”, Semiconductors and Semimetals Series, Vol 63, Academic Press (2000) p. 146, 148 Google Scholar