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Current Transient Study of RF GaN HEMTs Biased at Quiescent Point of VDS = 28 V and ID = 100 mA/mm under Different Temperatures

Published online by Cambridge University Press:  06 March 2019

Yen-Pin Lin ,
Yi Nan Zhong  and
Yue-ming Hsin
Yen-Pin Lin
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Yi Nan Zhong
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Yue-ming Hsin*
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
*
*(Email: yhsin@ee.ncu.edu.tw)
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Abstract

The current transient was studied on AlGaN/GaN HEMTs for RF power amplifiers under different temperatures. The current transient measurements include two different approaches. One is to measure the current transient from off-state (without bias) to a quiescent point (Q-point). Different transient behaviors were observed while switching to different Q-points. Another one is to measure the current transient from different currents to the Q-point of VDS = 28 V and ID = 100 mA/mm. The different currents before switching to Q-point of VDS = 28 V and ID = 100 mA/mm show the different transient characteristics. Most of the current transient demonstrates temperature independence in this study.

Keywords

devices
Type
Articles
Information
MRS Advances , Volume 4 , Issue 9: Electronic, Photonic and Magnetic Materials , 2019 , pp. 575 - 580
Copyright
Copyright © Materials Research Society 2019 

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References

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