Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

Sydney Buttera; Polla Rouf; Petro Deminskyi; Nathan O'Brien; Henrik Pedersen; Sean Barry

doi:10.26434/chemrxiv.13129910.v3

Physical Chemistry

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Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

08 December 2020, Version 3

Working Paper

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This content is an early or alternative research output and has not been peer-reviewed by Cambridge University Press at the time of posting.

Abstract

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

Keywords

atomic layer deposition

thin films

precursor

thermal characterazation

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